IXTA75N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

IXYS

Avalanche Energy Rating (Eas) :

1000 mJ

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Height :

4.5 mm

RoHS Status :

ROHS3 Compliant

Number of Channels :

1 Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Terminal Finish :

Matte Tin (Sn)

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

100 V

Supplier Device Package :

TO-263 (IXTA)

Turn-Off Delay Time :

66 ns

Factory Lead Time :

28 Weeks

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Base Product Number :

IXTA75

Channel Mode :

Enhancement

Pin Count :

4

Transistor Type :

1 N-Channel

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

FET Feature :

--

Terminal Position :

Single

Surface Mount :

yes

Subcategory :

MOSFETs

Transistor Polarity :

N-Channel

Number of Elements :

1

RoHS :

Details

Series :

PolarHT™

FET Type :

N-Channel

Continuous Drain Current (ID) :

75A

Maximum Operating Temperature :

+ 175 C

Number of Terminations :

2

Rise Time :

53ns

Terminal Form :

Gull wing

Length :

9.9 mm

Product Status :

Active

JESD-609 Code :

e3

Packaging :

Tube

Reach Compliance Code :

not_compliant

Product Category :

MOSFET

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Style :

SMD/SMT

Pulsed Drain Current-Max (IDM) :

200A

ECCN Code :

EAR99

Manufacturer :

IXYS

Drain-source On Resistance-Max :

0.025Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

25m Ω @ 500mA, 10V

Width :

9.2 mm

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

45 ns

Power Dissipation :

360W

Number of Terminals :

2

Mount :

Surface Mount

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Package :

Tube

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Product Type :

MOSFET

JEDEC-95 Code :

TO-263AB

Power Dissipation-Max :

360W Tc

Power Dissipation (Max) :

360W (Tc)

Gate to Source Voltage (Vgs) :

20V

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V