IXTA70N075T2

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Mfr.Part #
IXTA70N075T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 70A TO263
Stock
3,156
In Stock :
3,156

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Turn-Off Delay Time :
31 ns
Drain to Source Breakdown Voltage :
75V
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
180A
Package :
Tube
FET Type :
N-Channel
Product Type :
MOSFET
Terminal Form :
Gull wing
Manufacturer :
IXYS
Qualification Status :
Not Qualified
Mounting Type :
Surface Mount
Number of Channels :
1 Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSSO-G2
Product Category :
MOSFET
Transistor Type :
1 N-Channel
Resistance :
12mOhm
Base Product Number :
IXTA70
Configuration :
Single
Avalanche Energy Rating (Eas) :
300 mJ
Transistor Polarity :
N-Channel
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
FET Feature :
--
Power Dissipation (Max) :
150W (Tc)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Minimum Operating Temperature :
- 55 C
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
75V
Factory Lead Time :
28 Weeks
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Length :
10.41 mm
Continuous Drain Current (ID) :
70A
Rds On (Max) @ Id, Vgs :
12m Ω @ 25A, 10V
Mounting Style :
SMD/SMT
Terminal Finish :
Matte Tin (Sn)
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
4
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
150W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
9.65 mm
Tradename :
HiPerFET
Published :
2008
Transistor Element Material :
SILICON
Reach Compliance Code :
not_compliant
Packaging :
Tube
Number of Elements :
1
Channel Mode :
Enhancement
Supplier Device Package :
TO-263 (IXTA)
Input Capacitance (Ciss) (Max) @ Vds :
2725pF @ 25V
Vgs (Max) :
±20V
Case Connection :
DRAIN
ECCN Code :
EAR99
Mount :
Surface Mount
Fall Time (Typ) :
22 ns
Product Status :
Active
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
150W Tc
Height :
4.83 mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Series :
TrenchT2™
Rise Time :
28ns
Current - Continuous Drain (Id) @ 25°C :
70A Tc
Operating Temperature :
-55°C~175°C TJ
Maximum Operating Temperature :
+ 175 C
Brand :
IXYS
Datasheets
IXTA70N075T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA70N075T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1 Channel, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, IXTA70N075T2 pinout, IXTA70N075T2 datasheet PDF, IXTA70N075T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA70N075T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA70N075T2


N-Channel Tube 12m Ω @ 25A, 10V ±20V 2725pF @ 25V 46nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA70N075T2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2725pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 70A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 180A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTA70N075T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 180A.
a 75V drain to source voltage (Vdss)


IXTA70N075T2 Applications


There are a lot of IXYS
IXTA70N075T2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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