IXTA6N50P

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Mfr.Part #
IXTA6N50P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 6A TO263
Stock
49,158
In Stock :
49,158

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
28ns
Terminal Finish :
Matte Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
not_compliant
Number of Terminations :
2
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
6A
Vgs(th) (Max) @ Id :
5V @ 50μA
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
740pF @ 25V
Avalanche Energy Rating (Eas) :
250 mJ
Product Status :
Obsolete
Packaging :
Tube
JESD-609 Code :
e3
Pbfree Code :
yes
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
6A
Terminal Form :
Gull wing
Power Dissipation-Max :
100W Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs :
14.6nC @ 10V
Power Dissipation :
100W
Published :
2006
Manufacturer :
IXYS Corporation
Power Dissipation (Max) :
100W (Tc)
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 3A, 10V
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
500 V
Current - Continuous Drain (Id) @ 25°C :
6A Tc
JEDEC-95 Code :
TO-263AB
Additional Feature :
AVALANCHE RATED
Number of Terminals :
2
Current Rating :
6A
Fall Time (Typ) :
26 ns
Drain-source On Resistance-Max :
1.1 Ω
Pulsed Drain Current-Max (IDM) :
15A
FET Feature :
--
Element Configuration :
Single
Drain to Source Breakdown Voltage :
500V
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
65 ns
Series :
PolarHV™
Voltage - Rated DC :
500V
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
4
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
500V
Supplier Device Package :
TO-263 (IXTA)
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXTA6
JESD-30 Code :
R-PSSO-G2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA6N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IXTA6N50P pinout, IXTA6N50P datasheet PDF, IXTA6N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA6N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA6N50P


N-Channel Tube 1.1 Ω @ 3A, 10V ±30V 740pF @ 25V 14.6nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA6N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The maximum input capacitance of this device is 740pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 15A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTA6N50P Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 15A.
a 500V drain to source voltage (Vdss)


IXTA6N50P Applications


There are a lot of IXYS
IXTA6N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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