IXTA6N50P
- Mfr.Part #
- IXTA6N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6A TO263
- Stock
- 49,158
- In Stock :
- 49,158
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 100W Tc
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PolarHV™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Current Rating :
- 6A
- FET Type :
- N-Channel
- Factory Lead Time :
- 8 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- TO-263 (IXTA)
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 30V
- Avalanche Energy Rating (Eas) :
- 250 mJ
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 500 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 740pF @ 25V
- Case Connection :
- DRAIN
- Published :
- 2006
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 1.1 Ω
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 28ns
- RoHS Status :
- RoHS Compliant
- Manufacturer :
- IXYS Corporation
- Pulsed Drain Current-Max (IDM) :
- 15A
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Fall Time (Typ) :
- 26 ns
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 500V
- Drain Current-Max (Abs) (ID) :
- 6A
- Continuous Drain Current (ID) :
- 6A
- Base Product Number :
- IXTA6
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 3A, 10V
- Turn-Off Delay Time :
- 65 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Obsolete
- Power Dissipation :
- 100W
- Pin Count :
- 4
- Number of Terminals :
- 2
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 5V @ 50μA
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Number of Terminations :
- 2
- JEDEC-95 Code :
- TO-263AB
- Power Dissipation (Max) :
- 100W (Tc)
- Terminal Position :
- Single
- FET Feature :
- --
- Datasheets
- IXTA6N50P

N-Channel Tube 1.1 Ω @ 3A, 10V ±30V 740pF @ 25V 14.6nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA6N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The maximum input capacitance of this device is 740pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 15A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTA6N50P Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 15A.
a 500V drain to source voltage (Vdss)
IXTA6N50P Applications
There are a lot of IXYS
IXTA6N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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