IXTA5N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

100W

Current Rating :

5A

Continuous Drain Current (ID) :

5A

Voltage - Rated DC :

600V

Vgs (Max) :

±30V

Surface Mount :

yes

Pin Count :

4

Power Dissipation (Max) :

100W (Tc)

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Feature :

--

Vgs(th) (Max) @ Id :

5.5V @ 50μA

Terminal Form :

Gull wing

Terminal Finish :

Pure Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-263AB

Turn-Off Delay Time :

55 ns

Fall Time (Typ) :

17 ns

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Qualification Status :

Not Qualified

Product Status :

Obsolete

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

600V

Mount :

Surface Mount

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Package :

Tube

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

10A

Drain to Source Breakdown Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXTA5

Number of Terminals :

2

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

100W Tc

Gate Charge (Qg) (Max) @ Vgs :

14.2nC @ 10V

Terminal Position :

Single

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

5A

Drain-source On Resistance-Max :

1.7 Ω

Series :

PolarHV™

Number of Elements :

1

Element Configuration :

Single

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS Corporation

Rds On (Max) @ Id, Vgs :

1.7 Ω @ 2.5A, 10V

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-263 (IXTA)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

600 V

Avalanche Energy Rating (Eas) :

360 mJ

Rise Time :

24ns

Packaging :

Tube