IXTA5N60P

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Mfr.Part #
IXTA5N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 5A TO263
Stock
21,573
In Stock :
21,573

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSSO-G2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
100W
Current Rating :
5A
Continuous Drain Current (ID) :
5A
Voltage - Rated DC :
600V
Vgs (Max) :
±30V
Surface Mount :
yes
Pin Count :
4
Power Dissipation (Max) :
100W (Tc)
Number of Terminations :
2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Feature :
--
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Terminal Form :
Gull wing
Terminal Finish :
Pure Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JEDEC-95 Code :
TO-263AB
Turn-Off Delay Time :
55 ns
Fall Time (Typ) :
17 ns
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Qualification Status :
Not Qualified
Product Status :
Obsolete
Published :
2006
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 25V
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
600V
Mount :
Surface Mount
Lead Free :
Lead Free
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Surface Mount
Package :
Tube
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
RoHS Compliant
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
10A
Drain to Source Breakdown Voltage :
600V
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXTA5
Number of Terminals :
2
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
100W Tc
Gate Charge (Qg) (Max) @ Vgs :
14.2nC @ 10V
Terminal Position :
Single
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
5A
Drain-source On Resistance-Max :
1.7 Ω
Series :
PolarHV™
Number of Elements :
1
Element Configuration :
Single
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS Corporation
Rds On (Max) @ Id, Vgs :
1.7 Ω @ 2.5A, 10V
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-263 (IXTA)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
600 V
Avalanche Energy Rating (Eas) :
360 mJ
Rise Time :
24ns
Packaging :
Tube
Datasheets
IXTA5N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA5N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IXTA5N60P pinout, IXTA5N60P datasheet PDF, IXTA5N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA5N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA5N60P


N-Channel Tube 1.7 Ω @ 2.5A, 10V ±30V 750pF @ 25V 14.2nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA5N60P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 360 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 750pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Peak drain current for this device is 10A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTA5N60P Features


the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)


IXTA5N60P Applications


There are a lot of IXYS
IXTA5N60P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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