IXTA5N60P
- Mfr.Part #
- IXTA5N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A TO263
- Stock
- 21,573
- In Stock :
- 21,573
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 55 ns
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 1.7 Ω
- Rise Time :
- 24ns
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Published :
- 2006
- Pin Count :
- 4
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Fall Time (Typ) :
- 17 ns
- Voltage - Rated DC :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 100W Tc
- Current Rating :
- 5A
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 1.7 Ω @ 2.5A, 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-263 (IXTA)
- Continuous Drain Current (ID) :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Product Number :
- IXTA5
- Terminal Form :
- Gull wing
- FET Feature :
- --
- Product Status :
- Obsolete
- Manufacturer :
- IXYS Corporation
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 100W (Tc)
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 100W
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Pure Tin (Sn)
- JEDEC-95 Code :
- TO-263AB
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 2
- Pulsed Drain Current-Max (IDM) :
- 10A
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 600 V
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 5A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 14.2nC @ 10V
- Series :
- PolarHV™
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 600V
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTA5N60P

N-Channel Tube 1.7 Ω @ 2.5A, 10V ±30V 750pF @ 25V 14.2nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA5N60P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 360 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 750pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Peak drain current for this device is 10A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTA5N60P Features
the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)
IXTA5N60P Applications
There are a lot of IXYS
IXTA5N60P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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