IXTA5N50P
- Mfr.Part #
- IXTA5N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.8A TO263
- Stock
- 19,020
- In Stock :
- 19,020
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 1.4 Ω
- Voltage - Rated DC :
- 500V
- Power Dissipation (Max) :
- 89W (Tc)
- Continuous Drain Current (ID) :
- 4.8A
- Power Dissipation-Max (Abs) :
- 89 W
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-263AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 25V
- Drain to Source Breakdown Voltage :
- 500V
- Product Status :
- Obsolete
- Fall Time (Typ) :
- 24 ns
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 10A
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A Tc
- Power Dissipation :
- 89W
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 5A
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 500 V
- Rise Time :
- 26ns
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 250 mJ
- FET Feature :
- --
- Current Rating :
- 5A
- Terminal Finish :
- Matte Tin (Sn)
- Manufacturer :
- IXYS Corporation
- Gate to Source Voltage (Vgs) :
- 30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- TO-263 (IXTA)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXTA5
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Series :
- PolarHV™
- Power Dissipation-Max :
- 89W Tc
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 2
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 65 ns
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 500V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 2.4A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 12.6nC @ 10V
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Datasheets
- IXTA5N50P

N-Channel Tube 1.4 Ω @ 2.4A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA5N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 250 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 620pF @ 25V.This device has a continuous drain current (ID) of [4.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 10A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA5N50P Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
a 500V drain to source voltage (Vdss)
IXTA5N50P Applications
There are a lot of IXYS
IXTA5N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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