IXTA5N50P

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Mfr.Part #
IXTA5N50P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 4.8A TO263
Stock
19,020
In Stock :
19,020

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
not_compliant
JESD-30 Code :
R-PSSO-G2
Lead Free :
Lead Free
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
1.4 Ω
Voltage - Rated DC :
500V
Power Dissipation (Max) :
89W (Tc)
Continuous Drain Current (ID) :
4.8A
Power Dissipation-Max (Abs) :
89 W
Polarity/Channel Type :
N-Channel
JEDEC-95 Code :
TO-263AA
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
Drain to Source Breakdown Voltage :
500V
Product Status :
Obsolete
Fall Time (Typ) :
24 ns
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
10A
Current - Continuous Drain (Id) @ 25°C :
4.8A Tc
Power Dissipation :
89W
RoHS Status :
RoHS Compliant
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
5A
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Pin Count :
3
DS Breakdown Voltage-Min :
500 V
Rise Time :
26ns
Number of Elements :
1
Avalanche Energy Rating (Eas) :
250 mJ
FET Feature :
--
Current Rating :
5A
Terminal Finish :
Matte Tin (Sn)
Manufacturer :
IXYS Corporation
Gate to Source Voltage (Vgs) :
30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-263 (IXTA)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXTA5
Pbfree Code :
yes
FET Type :
N-Channel
Series :
PolarHV™
Power Dissipation-Max :
89W Tc
Surface Mount :
yes
Transistor Element Material :
SILICON
Number of Terminals :
2
Terminal Form :
Gull wing
Mount :
Surface Mount
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
65 ns
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
500V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JESD-609 Code :
e3
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs :
12.6nC @ 10V
Published :
2006
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
8 Weeks
Number of Terminations :
2
Case Connection :
DRAIN
Mounting Type :
Surface Mount
Datasheets
IXTA5N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA5N50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, IXTA5N50P pinout, IXTA5N50P datasheet PDF, IXTA5N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA5N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA5N50P


N-Channel Tube 1.4 Ω @ 2.4A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA5N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 250 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 620pF @ 25V.This device has a continuous drain current (ID) of [4.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 10A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA5N50P Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
a 500V drain to source voltage (Vdss)


IXTA5N50P Applications


There are a lot of IXYS
IXTA5N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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