IXTA56N15T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Product Type :

MOSFET

Supplier Device Package :

TO-263 (IXTA)

Avalanche Energy Rating (Eas) :

500 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Number of Pins :

3

DS Breakdown Voltage-Min :

150V

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

FET Feature :

--

Transistor Element Material :

SILICON

Power Dissipation (Max) :

300W (Tc)

Manufacturer :

IXYS

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

56 A

Factory Lead Time :

21 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Base Product Number :

IXTA56

Vgs (Max) :

±30V

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

300 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Published :

2007

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Series :

TrenchHV™

Mounting Type :

Surface Mount

Packaging :

Tube

JEDEC-95 Code :

TO-263AB

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

36m Ω @ 28A, 10V

Mounting Style :

SMD/SMT

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

140A

Product Status :

Active

Terminal Finish :

PURE TIN

Number of Elements :

1

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Power Dissipation-Max :

300W Tc

Package :

Tube

Continuous Drain Current (ID) :

56A

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.036 Ω

Number of Terminals :

2

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

150V

Mount :

Surface Mount

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Tradename :

HiPerFET