IXTA52P10P
- Mfr.Part #
- IXTA52P10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 52A TO263
- Stock
- 21,318
- In Stock :
- 21,318
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 4.83 mm
- Factory Lead Time :
- 17 Weeks
- RoHS :
- Compliant
- Brand :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 52A
- Reach Compliance Code :
- not_compliant
- Base Product Number :
- IXTA52
- Series :
- PolarP™
- Lead Free :
- Lead Free
- FET Feature :
- --
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Channels :
- 1 Channel
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Rds On Max :
- 50 mΩ
- Fall Time (Typ) :
- 22 ns
- Additional Feature :
- AVALANCHE RATED
- Minimum Operating Temperature :
- - 55 C
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-263 (IXTA)
- Max Power Dissipation :
- 300 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Package :
- Tube
- Transistor Polarity :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Channel Mode :
- Enhancement
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Max Operating Temperature :
- 150 °C
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 500mA, 10V
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2845pF @ 25V
- Input Capacitance :
- 2.845 nF
- Power Dissipation :
- 300W
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Min Operating Temperature :
- -55 °C
- Pulsed Drain Current-Max (IDM) :
- 130A
- Manufacturer :
- IXYS
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 29ns
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 38 ns
- Mount :
- Surface Mount
- Power Dissipation (Max) :
- 300W (Tc)
- Power Dissipation-Max :
- 300W Tc
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 50 mΩ
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Drain to Source Breakdown Voltage :
- -100V
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- SMD/SMT
- Transistor Type :
- 1 P-Channel
- FET Type :
- P-Channel
- Drain-source On Resistance-Max :
- 0.05Ohm
- Width :
- 9.65 mm
- Length :
- 10.41 mm
- JESD-609 Code :
- e3
- Product Category :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- IXTA52P10P

P-Channel Tube 50m Ω @ 500mA, 10V ±20V 2845pF @ 25V 60nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA52P10P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2845pF @ 25V.This device has a continuous drain current (ID) of [52A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 38 ns.A maximum pulsed drain current of 130A is the maximum peak drain current rated for this device.MOSFETs have 50 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA52P10P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 130A.
single MOSFETs transistor is 50 mΩ
a 100V drain to source voltage (Vdss)
IXTA52P10P Applications
There are a lot of IXYS
IXTA52P10P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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