IXTA52P10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55 °C

Factory Lead Time :

17 Weeks

Minimum Operating Temperature :

- 55 C

Avalanche Energy Rating (Eas) :

1500 mJ

Base Product Number :

IXTA52

Power Dissipation (Max) :

300W (Tc)

Pbfree Code :

yes

Length :

10.41 mm

Qualification Status :

Not Qualified

Supplier Device Package :

TO-263 (IXTA)

Configuration :

Single

Input Capacitance :

2.845 nF

Turn-Off Delay Time :

38 ns

FET Type :

P-Channel

Maximum Operating Temperature :

+ 150 C

Fall Time (Typ) :

22 ns

Transistor Polarity :

P-Channel

Drain to Source Breakdown Voltage :

-100V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

52A

Product Category :

MOSFET

Drain to Source Resistance :

50 mΩ

Pulsed Drain Current-Max (IDM) :

130A

Series :

PolarP™

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2845pF @ 25V

Transistor Type :

1 P-Channel

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150 °C

Brand :

IXYS

ECCN Code :

EAR99

Pin Count :

4

Vgs (Max) :

±20V

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Feature :

--

Mount :

Surface Mount

Max Power Dissipation :

300 W

Mounting Style :

SMD/SMT

Height :

4.83 mm

Terminal Finish :

Matte Tin (Sn)

Width :

9.65 mm

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.05Ohm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

50m Ω @ 500mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

RoHS :

Compliant

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Channel Mode :

Enhancement

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

100V

Power Dissipation :

300W

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Rise Time :

29ns

Operating Mode :

ENHANCEMENT MODE

Rds On Max :

50 mΩ

Package :

Tube

Lead Free :

Lead Free

Manufacturer :

IXYS

Product Type :

MOSFET

Product Status :

Active

Reach Compliance Code :

not_compliant