IXTA52P10P

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Mfr.Part #
IXTA52P10P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 100V 52A TO263
Stock
21,318
In Stock :
21,318

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
4.83 mm
Factory Lead Time :
17 Weeks
RoHS :
Compliant
Brand :
IXYS
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current (ID) :
52A
Reach Compliance Code :
not_compliant
Base Product Number :
IXTA52
Series :
PolarP™
Lead Free :
Lead Free
FET Feature :
--
Element Configuration :
Single
Pbfree Code :
yes
Number of Terminations :
2
Drain to Source Voltage (Vdss) :
100V
Number of Channels :
1 Channel
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Rds On Max :
50 mΩ
Fall Time (Typ) :
22 ns
Additional Feature :
AVALANCHE RATED
Minimum Operating Temperature :
- 55 C
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Supplier Device Package :
TO-263 (IXTA)
Max Power Dissipation :
300 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package :
Tube
Transistor Polarity :
P-Channel
Gate to Source Voltage (Vgs) :
20V
Published :
2008
Product Status :
Active
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Max Operating Temperature :
150 °C
Rds On (Max) @ Id, Vgs :
50m Ω @ 500mA, 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2845pF @ 25V
Input Capacitance :
2.845 nF
Power Dissipation :
300W
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Min Operating Temperature :
-55 °C
Pulsed Drain Current-Max (IDM) :
130A
Manufacturer :
IXYS
Avalanche Energy Rating (Eas) :
1500 mJ
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Rise Time :
29ns
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Turn-Off Delay Time :
38 ns
Mount :
Surface Mount
Power Dissipation (Max) :
300W (Tc)
Power Dissipation-Max :
300W Tc
RoHS Status :
ROHS3 Compliant
Drain to Source Resistance :
50 mΩ
Transistor Application :
SWITCHING
Pin Count :
4
Drain to Source Breakdown Voltage :
-100V
Number of Elements :
1
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
SMD/SMT
Transistor Type :
1 P-Channel
FET Type :
P-Channel
Drain-source On Resistance-Max :
0.05Ohm
Width :
9.65 mm
Length :
10.41 mm
JESD-609 Code :
e3
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Datasheets
IXTA52P10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA52P10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Channels:1 Channel, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, IXTA52P10P pinout, IXTA52P10P datasheet PDF, IXTA52P10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA52P10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA52P10P


P-Channel Tube 50m Ω @ 500mA, 10V ±20V 2845pF @ 25V 60nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA52P10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2845pF @ 25V.This device has a continuous drain current (ID) of [52A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 38 ns.A maximum pulsed drain current of 130A is the maximum peak drain current rated for this device.MOSFETs have 50 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA52P10P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 130A.
single MOSFETs transistor is 50 mΩ
a 100V drain to source voltage (Vdss)


IXTA52P10P Applications


There are a lot of IXYS
IXTA52P10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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