IXTA50N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

130 A

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Base Product Number :

IXTA50

Type :

Trench Gate Power MOSFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

PURE TIN

Drain Current-Max (Abs) (ID) :

50 A

Power Dissipation-Max (Abs) :

400 W

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Number of Elements :

1

Series :

--

JEDEC-95 Code :

TO-263AB

Drain-source On Resistance-Max :

0.05Ohm

DS Breakdown Voltage-Min :

250V

Factory Lead Time :

30 Weeks

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

400W Tc

Number of Terminations :

2

Tradename :

HiPerFET

Packaging :

Tube

Case Connection :

DRAIN

Published :

2005

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Polarity :

N-Channel

Pbfree Code :

yes

Brand :

IXYS

Width :

10.41 mm

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-609 Code :

e3

Rise Time :

25 ns

Product Status :

Active

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Continuous Drain Current (ID) :

50A

Length :

9.65 mm

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Channel Mode :

Enhancement

Supplier Device Package :

TO-263 (IXTA)

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

250V

Height :

4.83 mm

Qualification Status :

Not Qualified

Transistor Type :

1 N-Channel

Number of Pins :

3

Terminal Form :

Gull wing

Terminal Position :

Single

Number of Terminals :

2

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Avalanche Energy Rating (Eas) :

1500 mJ

Product Category :

MOSFET

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

50m Ω @ 25A, 10V

ECCN Code :

EAR99

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

400W (Tc)