IXTA50N25T
- Mfr.Part #
- IXTA50N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 50A TO263
- Stock
- 1,204
- In Stock :
- 1,204
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTA50
- JEDEC-95 Code :
- TO-263AB
- Product Type :
- MOSFET
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Continuous Drain Current (ID) :
- 50A
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Number of Terminals :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 130 A
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 25A, 10V
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- JESD-609 Code :
- e3
- Power Dissipation-Max (Abs) :
- 400 W
- Length :
- 9.65 mm
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Supplier Device Package :
- TO-263 (IXTA)
- Pin Count :
- 4
- Reach Compliance Code :
- Unknown
- ECCN Code :
- EAR99
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 400W (Tc)
- Published :
- 2005
- Mounting Style :
- SMD/SMT
- Tradename :
- HiPerFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Series :
- --
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case Connection :
- DRAIN
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Drain to Source Voltage (Vdss) :
- 250V
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- DS Breakdown Voltage-Min :
- 250V
- Qualification Status :
- Not Qualified
- Height :
- 4.83 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Type :
- Trench Gate Power MOSFET
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 50 A
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.05Ohm
- Width :
- 10.41 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Mount :
- Surface Mount
- Terminal Finish :
- PURE TIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 400W Tc
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Rise Time :
- 25 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 30 Weeks
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Datasheets
- IXTA50N25T

N-Channel Tube 50m Ω @ 25A, 10V ±30V 4000pF @ 25V 78nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA50N25T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.50 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 130 A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTA50N25T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 130 A.
a 250V drain to source voltage (Vdss)
IXTA50N25T Applications
There are a lot of IXYS
IXTA50N25T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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