IXTA50N20P
- Mfr.Part #
- IXTA50N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 50A TO263
- Stock
- 300
- In Stock :
- 300
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- Single
- Height :
- 4.83 mm
- Power Dissipation-Max :
- 360W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Transistor Polarity :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Type :
- PolarHT Power MOSFET
- Mounting Type :
- Surface Mount
- Power Dissipation-Max (Abs) :
- 360 W
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 30 ns
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 50A
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation (Max) :
- 360W (Tc)
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXTA50
- Packaging :
- Tube
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 50A, 10V
- Power Dissipation :
- 360W
- Input Capacitance (Ciss) (Max) @ Vds :
- 2720pF @ 25V
- Tradename :
- PolarHT
- Length :
- 9.65 mm
- Package :
- Tube
- Width :
- 10.41 mm
- FET Feature :
- --
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Brand :
- IXYS
- Rise Time :
- 35ns
- DS Breakdown Voltage-Min :
- 200 V
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 120A
- Factory Lead Time :
- 28 Weeks
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 200V
- Drain Current-Max (Abs) (ID) :
- 50 A
- Drain-source On Resistance-Max :
- 0.06Ohm
- Mounting Style :
- SMD/SMT
- Pin Count :
- 4
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- + 175 C
- JEDEC-95 Code :
- TO-263AB
- Series :
- PolarHT™
- Supplier Device Package :
- TO-263 (IXTA)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 70 ns
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Number of Terminals :
- 2
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXTA50N20P

N-Channel Tube 60m Ω @ 50A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA50N20P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 2720pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 50 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA50N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120A.
a 200V drain to source voltage (Vdss)
IXTA50N20P Applications
There are a lot of IXYS
IXTA50N20P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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