IXTA50N20P

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Mfr.Part #
IXTA50N20P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 200V 50A TO263
Stock
300
In Stock :
300

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max (Abs) :
360 W
Mounting Style :
SMD/SMT
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Configuration :
Single
Pbfree Code :
yes
Number of Elements :
1
Manufacturer :
IXYS
Turn-Off Delay Time :
70 ns
Vgs(th) (Max) @ Id :
5V @ 250μA
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Avalanche Energy Rating (Eas) :
1000 mJ
Tradename :
PolarHT
Drain Current-Max (Abs) (ID) :
50 A
Power Dissipation (Max) :
360W (Tc)
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Published :
2008
Drain-source On Resistance-Max :
0.06Ohm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSSO-G2
Element Configuration :
Single
Drain to Source Breakdown Voltage :
200V
Width :
10.41 mm
Reach Compliance Code :
not_compliant
Product Category :
MOSFET
Power Dissipation :
360W
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Power Dissipation-Max :
360W Tc
Type :
PolarHT Power MOSFET
Operating Temperature :
-55°C~175°C TJ
Number of Channels :
1 Channel
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
60m Ω @ 50A, 10V
Transistor Application :
SWITCHING
Factory Lead Time :
28 Weeks
Pin Count :
4
FET Type :
N-Channel
FET Feature :
--
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Finish :
Matte Tin (Sn)
Length :
9.65 mm
JEDEC-95 Code :
TO-263AB
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Height :
4.83 mm
Input Capacitance (Ciss) (Max) @ Vds :
2720pF @ 25V
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
120A
Mounting Type :
Surface Mount
Package :
Tube
Channel Mode :
Enhancement
Number of Terminations :
2
DS Breakdown Voltage-Min :
200 V
Maximum Operating Temperature :
+ 175 C
Rise Time :
35ns
Number of Terminals :
2
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Surface Mount
Fall Time (Typ) :
30 ns
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
50A
Packaging :
Tube
Base Product Number :
IXTA50
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Series :
PolarHT™
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Supplier Device Package :
TO-263 (IXTA)
Datasheets
IXTA50N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA50N20P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT Power MOSFET, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Terminations:2, IXTA50N20P pinout, IXTA50N20P datasheet PDF, IXTA50N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA50N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA50N20P


N-Channel Tube 60m Ω @ 50A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA50N20P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 2720pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 50 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA50N20P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120A.
a 200V drain to source voltage (Vdss)


IXTA50N20P Applications


There are a lot of IXYS
IXTA50N20P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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