IXTA50N20P
- Mfr.Part #
- IXTA50N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 50A TO263
- Stock
- 300
- In Stock :
- 300
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 360 W
- Mounting Style :
- SMD/SMT
- Drain to Source Voltage (Vdss) :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Configuration :
- Single
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Turn-Off Delay Time :
- 70 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Tradename :
- PolarHT
- Drain Current-Max (Abs) (ID) :
- 50 A
- Power Dissipation (Max) :
- 360W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Published :
- 2008
- Drain-source On Resistance-Max :
- 0.06Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 200V
- Width :
- 10.41 mm
- Reach Compliance Code :
- not_compliant
- Product Category :
- MOSFET
- Power Dissipation :
- 360W
- Polarity/Channel Type :
- N-Channel
- Brand :
- IXYS
- Power Dissipation-Max :
- 360W Tc
- Type :
- PolarHT Power MOSFET
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 50A, 10V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 28 Weeks
- Pin Count :
- 4
- FET Type :
- N-Channel
- FET Feature :
- --
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 9.65 mm
- JEDEC-95 Code :
- TO-263AB
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Height :
- 4.83 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2720pF @ 25V
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 120A
- Mounting Type :
- Surface Mount
- Package :
- Tube
- Channel Mode :
- Enhancement
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 200 V
- Maximum Operating Temperature :
- + 175 C
- Rise Time :
- 35ns
- Number of Terminals :
- 2
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 30 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 50A
- Packaging :
- Tube
- Base Product Number :
- IXTA50
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Series :
- PolarHT™
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Supplier Device Package :
- TO-263 (IXTA)
- Datasheets
- IXTA50N20P

N-Channel Tube 60m Ω @ 50A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA50N20P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 2720pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 50 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA50N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120A.
a 200V drain to source voltage (Vdss)
IXTA50N20P Applications
There are a lot of IXYS
IXTA50N20P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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