IXTA4N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS :

Compliant

Terminal Position :

Single

Factory Lead Time :

28 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

60 ns

Mount :

Surface Mount

Configuration :

Single

Manufacturer :

IXYS

Drain to Source Resistance :

3 Ω

Height :

4.5 mm

Power Dissipation :

100W

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Case Connection :

DRAIN

JESD-609 Code :

e3

Series :

PolarHV™

Terminal Form :

Gull wing

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

RoHS Status :

ROHS3 Compliant

Rise Time :

24ns

Subcategory :

MOSFETs

Published :

2006

Length :

9.9 mm

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

3.6A

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Mode :

Enhancement

Product Category :

MOSFET

Power Dissipation-Max :

100W Tc

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Pin Count :

4

Max Power Dissipation :

100 W

Number of Elements :

1

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

800V

Surface Mount :

yes

Max Operating Temperature :

150 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

Number of Terminals :

2

Drain-source On Resistance-Max :

3.4 Ω

Input Capacitance :

750 pF

Package :

Tube

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

Product Status :

Active

Brand :

IXYS

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±30V

Fall Time (Typ) :

29 ns

Pulsed Drain Current-Max (IDM) :

8A

JEDEC-95 Code :

TO-263AB

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

800V

Width :

9.2 mm

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

800 V

Rds On Max :

3.4 Ω

Avalanche Energy Rating (Eas) :

250 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Mounting Style :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

14.2nC @ 10V

Min Operating Temperature :

-55 °C

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

Power Dissipation (Max) :

100W (Tc)

Supplier Device Package :

TO-263 (IXTA)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Base Product Number :

IXTA4

Product Type :

MOSFET

Packaging :

Tube