IXTA4N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

JESD-609 Code :

e3

Number of Terminals :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

250 mJ

Max Power Dissipation :

100 W

Pulsed Drain Current-Max (IDM) :

8A

Base Product Number :

IXTA4

Power Dissipation-Max :

100W Tc

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Brand :

IXYS

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

14.2nC @ 10V

Input Capacitance :

750 pF

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

800V

Minimum Operating Temperature :

- 55 C

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Min Operating Temperature :

-55 °C

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Subcategory :

MOSFETs

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

29 ns

Product Type :

MOSFET

Rds On Max :

3.4 Ω

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

800 V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Supplier Device Package :

TO-263 (IXTA)

Additional Feature :

AVALANCHE RATED

Series :

PolarHV™

Number of Elements :

1

Package :

Tube

Turn-Off Delay Time :

60 ns

Published :

2006

Number of Terminations :

2

Maximum Operating Temperature :

+ 150 C

Terminal Form :

Gull wing

Mounting Style :

SMD/SMT

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-263AB

Channel Mode :

Enhancement

Pin Count :

4

Qualification Status :

Not Qualified

Product Category :

MOSFET

Mount :

Surface Mount

Product Status :

Active

Vgs (Max) :

±30V

Rise Time :

24ns

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

Length :

9.9 mm

Height :

4.5 mm

FET Feature :

--

Pbfree Code :

yes

Drain to Source Resistance :

3 Ω

Terminal Position :

Single

RoHS :

Compliant

Power Dissipation (Max) :

100W (Tc)

Width :

9.2 mm

Factory Lead Time :

28 Weeks

Case Connection :

DRAIN

Continuous Drain Current (ID) :

3.6A

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

3.4 Ω

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Drain to Source Breakdown Voltage :

800V

Power Dissipation :

100W

Max Operating Temperature :

150 °C

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc