IXTA4N60P
- Mfr.Part #
- IXTA4N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4A TO263
- Stock
- 17,765
- In Stock :
- 17,765
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2006
- Surface Mount :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 89W Tc
- Base Product Number :
- IXTA4
- Turn-Off Delay Time :
- 50 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Current Rating :
- 4A
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 600 V
- Number of Terminals :
- 2
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-263 (IXTA)
- Rise Time :
- 10ns
- Drain Current-Max (Abs) (ID) :
- 4A
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 5.5V @ 100μA
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Fall Time (Typ) :
- 20 ns
- Voltage - Rated DC :
- 600V
- Drain-source On Resistance-Max :
- 2Ohm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 2A, 10V
- Power Dissipation (Max) :
- 89W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 635pF @ 25V
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- FET Feature :
- -
- Continuous Drain Current (ID) :
- 4A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 10A
- Power Dissipation :
- 89W
- JEDEC-95 Code :
- TO-263AB
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Manufacturer :
- IXYS Corporation
- Series :
- PolarHV™
- Factory Lead Time :
- 8 Weeks
- Datasheets
- IXTA4N60P

N-Channel Tube 2 Ω @ 2A, 10V ±30V 635pF @ 25V 13nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA4N60P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 635pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA4N60P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)
IXTA4N60P Applications
There are a lot of IXYS
IXTA4N60P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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