IXTA4N60P

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Mfr.Part #
IXTA4N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 4A TO263
Stock
17,765
In Stock :
17,765

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2006
Surface Mount :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
89W Tc
Base Product Number :
IXTA4
Turn-Off Delay Time :
50 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Current Rating :
4A
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
30V
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Mount :
Surface Mount
Case Connection :
DRAIN
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
600 V
Number of Terminals :
2
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
4A Tc
Pin Count :
4
Transistor Element Material :
SILICON
Supplier Device Package :
TO-263 (IXTA)
Rise Time :
10ns
Drain Current-Max (Abs) (ID) :
4A
Polarity/Channel Type :
N-Channel
RoHS Status :
RoHS Compliant
Package :
Tube
Drain to Source Voltage (Vdss) :
600V
Vgs(th) (Max) @ Id :
5.5V @ 100μA
Pbfree Code :
yes
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Fall Time (Typ) :
20 ns
Voltage - Rated DC :
600V
Drain-source On Resistance-Max :
2Ohm
Number of Elements :
1
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
Gull wing
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
2 Ω @ 2A, 10V
Power Dissipation (Max) :
89W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
635pF @ 25V
Qualification Status :
Not Qualified
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
FET Feature :
-
Continuous Drain Current (ID) :
4A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Application :
SWITCHING
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
600V
Pulsed Drain Current-Max (IDM) :
10A
Power Dissipation :
89W
JEDEC-95 Code :
TO-263AB
Avalanche Energy Rating (Eas) :
150 mJ
Manufacturer :
IXYS Corporation
Series :
PolarHV™
Factory Lead Time :
8 Weeks
Datasheets
IXTA4N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA4N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, IXTA4N60P pinout, IXTA4N60P datasheet PDF, IXTA4N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA4N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA4N60P


N-Channel Tube 2 Ω @ 2A, 10V ±30V 635pF @ 25V 13nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA4N60P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 635pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA4N60P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)


IXTA4N60P Applications


There are a lot of IXYS
IXTA4N60P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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