IXTA48N20T

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Mfr.Part #
IXTA48N20T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 200V 48A TO263
Stock
43,577
In Stock :
43,577

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
200V
Surface Mount :
yes
Input Capacitance (Ciss) (Max) @ Vds :
3090pF @ 25V
Pin Count :
3
FET Type :
N-Channel
Mount :
Surface Mount
Drain-source On Resistance-Max :
0.05Ohm
Width :
9.65 mm
Mounting Type :
Surface Mount
Number of Elements :
1
Transistor Element Material :
SILICON
Pbfree Code :
yes
Brand :
IXYS
Power Dissipation :
250W
Drain Current-Max (Abs) (ID) :
48 A
Product Type :
MOSFET
Terminal Position :
Single
Fall Time (Typ) :
28 ns
Product Status :
Active
Continuous Drain Current (ID) :
48A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation (Max) :
250W (Tc)
Package Shape :
RECTANGULAR
Published :
2010
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Length :
10.29 mm
JESD-30 Code :
R-PSSO-G2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rise Time :
26ns
Height :
4.83 mm
Rds On (Max) @ Id, Vgs :
50m Ω @ 24A, 10V
Package :
Tube
Manufacturer :
IXYS
Supplier Device Package :
TO-263 (IXTA)
DS Breakdown Voltage-Min :
200 V
JESD-609 Code :
e3
JEDEC-95 Code :
TO-263AA
Operating Temperature :
-55°C~175°C TJ
Qualification Status :
Not Qualified
Mounting Style :
SMD/SMT
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Channel Mode :
Enhancement
Number of Terminals :
2
Vgs (Max) :
±30V
Base Product Number :
IXTA48
Number of Channels :
1 Channel
Turn-Off Delay Time :
46 ns
Minimum Operating Temperature :
- 55 C
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Transistor Polarity :
N-Channel
Tradename :
HiPerFET
Additional Feature :
AVALANCHE RATED
Number of Terminations :
2
Avalanche Energy Rating (Eas) :
500 mJ
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
200V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Power Dissipation-Max (Abs) :
250 W
Reach Compliance Code :
not_compliant
Series :
Trench™
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
30V
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
48A Tc
FET Feature :
--
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
130A
Case Connection :
DRAIN
Configuration :
Single
Power Dissipation-Max :
250W Tc
Maximum Operating Temperature :
+ 175 C
Element Configuration :
Single
Factory Lead Time :
30 Weeks
Terminal Finish :
Matte Tin (Sn)
Datasheets
IXTA48N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA48N20T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Terminations:2, IXTA48N20T pinout, IXTA48N20T datasheet PDF, IXTA48N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA48N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA48N20T


N-Channel Tube 50m Ω @ 24A, 10V ±30V 3090pF @ 25V 60nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA48N20T Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3090pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 48A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 48 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 46 ns.Peak drain current is 130A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTA48N20T Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 130A.
a 200V drain to source voltage (Vdss)


IXTA48N20T Applications


There are a lot of IXYS
IXTA48N20T applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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