IXTA48N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Brand :

IXYS

FET Feature :

--

Avalanche Energy Rating (Eas) :

500 mJ

Product Status :

Active

JEDEC-95 Code :

TO-263AA

Drain Current-Max (Abs) (ID) :

48 A

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3090pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

250W

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Supplier Device Package :

TO-263 (IXTA)

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Base Product Number :

IXTA48

Series :

Trench™

Rds On (Max) @ Id, Vgs :

50m Ω @ 24A, 10V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Package :

Tube

Surface Mount :

yes

ECCN Code :

EAR99

Turn-Off Delay Time :

46 ns

Reach Compliance Code :

not_compliant

Maximum Operating Temperature :

+ 175 C

Length :

10.29 mm

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

130A

Continuous Drain Current (ID) :

48A

DS Breakdown Voltage-Min :

200 V

Number of Channels :

1 Channel

Number of Terminals :

2

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.05Ohm

Published :

2010

Power Dissipation-Max :

250W Tc

Height :

4.83 mm

Transistor Element Material :

SILICON

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

200V

Number of Elements :

1

Manufacturer :

IXYS

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

250W (Tc)

FET Type :

N-Channel

Element Configuration :

Single

Case Connection :

DRAIN

Terminal Position :

Single

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Lead Free :

Lead Free

Power Dissipation-Max (Abs) :

250 W

Rise Time :

26ns

Tradename :

HiPerFET

Vgs (Max) :

±30V

Mounting Style :

SMD/SMT

Package Shape :

RECTANGULAR

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Fall Time (Typ) :

28 ns

Drain to Source Breakdown Voltage :

200V

Channel Mode :

Enhancement

Width :

9.65 mm

Number of Terminations :

2

Factory Lead Time :

30 Weeks