IXTA48N20T
- Mfr.Part #
- IXTA48N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 48A TO263
- Stock
- 43,577
- In Stock :
- 43,577
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 200V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 3090pF @ 25V
- Series :
- Trench™
- Product Type :
- MOSFET
- Supplier Device Package :
- TO-263 (IXTA)
- Reach Compliance Code :
- not_compliant
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Width :
- 9.65 mm
- Power Dissipation :
- 250W
- Base Product Number :
- IXTA48
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Pulsed Drain Current-Max (IDM) :
- 130A
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 2
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 250W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Manufacturer :
- IXYS
- Number of Terminals :
- 2
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- + 175 C
- Product Status :
- Active
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Configuration :
- Single
- FET Feature :
- --
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 250 W
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.05Ohm
- Height :
- 4.83 mm
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- JEDEC-95 Code :
- TO-263AA
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 24A, 10V
- Power Dissipation-Max :
- 250W Tc
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- Rise Time :
- 26ns
- Drain to Source Voltage (Vdss) :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Tradename :
- HiPerFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Turn-Off Delay Time :
- 46 ns
- Fall Time (Typ) :
- 28 ns
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Length :
- 10.29 mm
- Factory Lead Time :
- 30 Weeks
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 200 V
- Surface Mount :
- yes
- Mount :
- Surface Mount
- Published :
- 2010
- Drain Current-Max (Abs) (ID) :
- 48 A
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 48A
- Mounting Style :
- SMD/SMT
- Pbfree Code :
- yes
- Datasheets
- IXTA48N20T

N-Channel Tube 50m Ω @ 24A, 10V ±30V 3090pF @ 25V 60nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA48N20T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3090pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 48A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 48 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 46 ns.Peak drain current is 130A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA48N20T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 130A.
a 200V drain to source voltage (Vdss)
IXTA48N20T Applications
There are a lot of IXYS
IXTA48N20T applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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