IXTA48N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

200V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3090pF @ 25V

Series :

Trench™

Product Type :

MOSFET

Supplier Device Package :

TO-263 (IXTA)

Reach Compliance Code :

not_compliant

Number of Channels :

1 Channel

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Transistor Element Material :

SILICON

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Width :

9.65 mm

Power Dissipation :

250W

Base Product Number :

IXTA48

Avalanche Energy Rating (Eas) :

500 mJ

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Pulsed Drain Current-Max (IDM) :

130A

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

2

Minimum Operating Temperature :

- 55 C

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Power Dissipation (Max) :

250W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Manufacturer :

IXYS

Number of Terminals :

2

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 175 C

Product Status :

Active

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Configuration :

Single

FET Feature :

--

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

250 W

Terminal Position :

Single

Drain-source On Resistance-Max :

0.05Ohm

Height :

4.83 mm

Lead Free :

Lead Free

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-263AA

Rds On (Max) @ Id, Vgs :

50m Ω @ 24A, 10V

Power Dissipation-Max :

250W Tc

Package Shape :

RECTANGULAR

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Rise Time :

26ns

Drain to Source Voltage (Vdss) :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Tradename :

HiPerFET

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Turn-Off Delay Time :

46 ns

Fall Time (Typ) :

28 ns

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Length :

10.29 mm

Factory Lead Time :

30 Weeks

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

200 V

Surface Mount :

yes

Mount :

Surface Mount

Published :

2010

Drain Current-Max (Abs) (ID) :

48 A

Brand :

IXYS

Continuous Drain Current (ID) :

48A

Mounting Style :

SMD/SMT

Pbfree Code :

yes