IXTA42N25P
- Mfr.Part #
- IXTA42N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 42A TO263
- Stock
- 43,369
- In Stock :
- 43,369
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 4.5 mm
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Active
- Power Dissipation-Max :
- 300W Tc
- Mounting Style :
- SMD/SMT
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- JESD-609 Code :
- e3
- Product Type :
- MOSFET
- Length :
- 9.9 mm
- Product Category :
- MOSFET
- Subcategory :
- MOSFETs
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 84m Ω @ 500mA, 10V
- Reach Compliance Code :
- not_compliant
- Series :
- PolarHT™
- Turn-Off Delay Time :
- 81 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2300pF @ 25V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Published :
- 2006
- DS Breakdown Voltage-Min :
- 250 V
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 250V
- JESD-30 Code :
- R-PSSO-G2
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Power Dissipation (Max) :
- 300W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 250V
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Transistor Polarity :
- N-Channel
- FET Feature :
- --
- Rise Time :
- 28ns
- Vgs (Max) :
- ±20V
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 9.2 mm
- Continuous Drain Current (ID) :
- 42A
- Supplier Device Package :
- TO-263 (IXTA)
- Pulsed Drain Current-Max (IDM) :
- 110A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 2
- Drain-source On Resistance-Max :
- 0.084Ohm
- Channel Mode :
- Enhancement
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- yes
- Maximum Operating Temperature :
- + 150 C
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer :
- IXYS
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-263AB
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Base Product Number :
- IXTA42
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Number of Channels :
- 1 Channel
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 300W
- Factory Lead Time :
- 28 Weeks
- Fall Time (Typ) :
- 30 ns
- Datasheets
- IXTA42N25P

N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA42N25P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 81 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTA42N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a 250V drain to source voltage (Vdss)
IXTA42N25P Applications
There are a lot of IXYS
IXTA42N25P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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