IXTA42N25P
- Mfr.Part #
- IXTA42N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 42A TO263
- Stock
- 43,369
- In Stock :
- 43,369
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 28 Weeks
- Power Dissipation-Max :
- 300W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 30 ns
- JEDEC-95 Code :
- TO-263AB
- DS Breakdown Voltage-Min :
- 250 V
- Power Dissipation (Max) :
- 300W (Tc)
- Drain to Source Voltage (Vdss) :
- 250V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2300pF @ 25V
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- Product Category :
- MOSFET
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Transistor Polarity :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Number of Terminals :
- 2
- Pulsed Drain Current-Max (IDM) :
- 110A
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 250V
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 84m Ω @ 500mA, 10V
- Brand :
- IXYS
- FET Feature :
- --
- Product Status :
- Active
- Configuration :
- Single
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Height :
- 4.5 mm
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Product Type :
- MOSFET
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXTA42
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Channel Mode :
- Enhancement
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Power Dissipation :
- 300W
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Pin Count :
- 4
- Maximum Operating Temperature :
- + 150 C
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2006
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.084Ohm
- Mounting Style :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Rise Time :
- 28ns
- Length :
- 9.9 mm
- Series :
- PolarHT™
- Case Connection :
- DRAIN
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Number of Elements :
- 1
- Supplier Device Package :
- TO-263 (IXTA)
- Surface Mount :
- yes
- Turn-Off Delay Time :
- 81 ns
- Width :
- 9.2 mm
- Continuous Drain Current (ID) :
- 42A
- Datasheets
- IXTA42N25P

N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA42N25P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 81 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTA42N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a 250V drain to source voltage (Vdss)
IXTA42N25P Applications
There are a lot of IXYS
IXTA42N25P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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