IXTA42N25P

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Mfr.Part #
IXTA42N25P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 250V 42A TO263
Stock
43,369
In Stock :
43,369

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Height :
4.5 mm
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Operating Temperature :
-55°C~150°C TJ
Product Status :
Active
Power Dissipation-Max :
300W Tc
Mounting Style :
SMD/SMT
Additional Feature :
AVALANCHE RATED
Package :
Tube
JESD-609 Code :
e3
Product Type :
MOSFET
Length :
9.9 mm
Product Category :
MOSFET
Subcategory :
MOSFETs
Package Shape :
RECTANGULAR
Number of Terminations :
2
Rds On (Max) @ Id, Vgs :
84m Ω @ 500mA, 10V
Reach Compliance Code :
not_compliant
Series :
PolarHT™
Turn-Off Delay Time :
81 ns
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 25V
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Published :
2006
DS Breakdown Voltage-Min :
250 V
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
250V
JESD-30 Code :
R-PSSO-G2
Minimum Operating Temperature :
- 55 C
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Power Dissipation (Max) :
300W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
250V
Terminal Finish :
Matte Tin (Sn)
Mount :
Surface Mount
Transistor Polarity :
N-Channel
FET Feature :
--
Rise Time :
28ns
Vgs (Max) :
±20V
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
Width :
9.2 mm
Continuous Drain Current (ID) :
42A
Supplier Device Package :
TO-263 (IXTA)
Pulsed Drain Current-Max (IDM) :
110A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
2
Drain-source On Resistance-Max :
0.084Ohm
Channel Mode :
Enhancement
Polarity/Channel Type :
N-Channel
Surface Mount :
yes
Maximum Operating Temperature :
+ 150 C
Number of Elements :
1
Mounting Type :
Surface Mount
Configuration :
Single
Element Configuration :
Single
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer :
IXYS
Brand :
IXYS
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
JEDEC-95 Code :
TO-263AB
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
1000 mJ
Base Product Number :
IXTA42
Pbfree Code :
yes
Terminal Form :
Gull wing
Number of Channels :
1 Channel
Pin Count :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
300W
Factory Lead Time :
28 Weeks
Fall Time (Typ) :
30 ns
Datasheets
IXTA42N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA42N25P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, IXTA42N25P pinout, IXTA42N25P datasheet PDF, IXTA42N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA42N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA42N25P


N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA42N25P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 81 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTA42N25P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a 250V drain to source voltage (Vdss)


IXTA42N25P Applications


There are a lot of IXYS
IXTA42N25P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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