IXTA42N25P

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Mfr.Part #
IXTA42N25P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 250V 42A TO263
Stock
43,369
In Stock :
43,369

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
28 Weeks
Power Dissipation-Max :
300W Tc
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
30 ns
JEDEC-95 Code :
TO-263AB
DS Breakdown Voltage-Min :
250 V
Power Dissipation (Max) :
300W (Tc)
Drain to Source Voltage (Vdss) :
250V
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 25V
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
not_compliant
FET Type :
N-Channel
Product Category :
MOSFET
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
2
Mount :
Surface Mount
Terminal Form :
Gull wing
JESD-609 Code :
e3
Transistor Polarity :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Number of Terminals :
2
Pulsed Drain Current-Max (IDM) :
110A
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
250V
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
84m Ω @ 500mA, 10V
Brand :
IXYS
FET Feature :
--
Product Status :
Active
Configuration :
Single
Package :
Tube
Transistor Element Material :
SILICON
Terminal Position :
Single
Height :
4.5 mm
JESD-30 Code :
R-PSSO-G2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Product Type :
MOSFET
Subcategory :
MOSFETs
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXTA42
Minimum Operating Temperature :
- 55 C
Additional Feature :
AVALANCHE RATED
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Power Dissipation :
300W
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
1000 mJ
Pin Count :
4
Maximum Operating Temperature :
+ 150 C
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Published :
2006
Qualification Status :
Not Qualified
Element Configuration :
Single
Drain-source On Resistance-Max :
0.084Ohm
Mounting Style :
SMD/SMT
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Rise Time :
28ns
Length :
9.9 mm
Series :
PolarHT™
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Number of Elements :
1
Supplier Device Package :
TO-263 (IXTA)
Surface Mount :
yes
Turn-Off Delay Time :
81 ns
Width :
9.2 mm
Continuous Drain Current (ID) :
42A
Datasheets
IXTA42N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA42N25P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IXTA42N25P pinout, IXTA42N25P datasheet PDF, IXTA42N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA42N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA42N25P


N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA42N25P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 81 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTA42N25P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a 250V drain to source voltage (Vdss)


IXTA42N25P Applications


There are a lot of IXYS
IXTA42N25P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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