IXTA42N15T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Terminations :

2

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.045Ohm

Surface Mount :

yes

Pin Count :

4

Packaging :

Tube

Factory Lead Time :

30 Weeks

Transistor Element Material :

SILICON

Number of Terminals :

2

Power Dissipation-Max (Abs) :

200 W

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

150V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Product Status :

Active

Brand :

IXYS

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

16 ns

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature :

+ 175 C

Base Product Number :

IXTA42

JEDEC-95 Code :

TO-263AB

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

200W Tc

Manufacturer :

IXYS

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

100A

Pbfree Code :

yes

FET Feature :

-

Mounting Style :

SMD/SMT

Tradename :

HiPerFET

Reach Compliance Code :

not_compliant

Supplier Device Package :

TO-263 (D2Pak)

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1880pF @ 25V

Transistor Polarity :

N-Channel

Number of Elements :

1

Channel Mode :

Enhancement

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Rds On (Max) @ Id, Vgs :

45m Ω @ 21A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

150V

Drain Current-Max (Abs) (ID) :

42A

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Product Type :

MOSFET

Series :

Trench

Power Dissipation (Max) :

200W (Tc)

Vgs (Max) :

±30V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

400 mJ

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V