IXTA3N60P
- Mfr.Part #
- IXTA3N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3A TO263
- Stock
- 70
- In Stock :
- 70
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Obsolete
- Pin Count :
- 4
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Packaging :
- Tube
- Voltage - Rated DC :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 6A
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2006
- Base Product Number :
- IXTA3
- Fall Time (Typ) :
- 22 ns
- Turn-Off Delay Time :
- 58 ns
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 2.9 Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 70W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 2.9 Ω @ 500mA, 10V
- DS Breakdown Voltage-Min :
- 600 V
- FET Feature :
- --
- Current Rating :
- 3A
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Factory Lead Time :
- 8 Weeks
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Rise Time :
- 25ns
- Drain to Source Voltage (Vdss) :
- 600V
- Drain Current-Max (Abs) (ID) :
- 3A
- Gate Charge (Qg) (Max) @ Vgs :
- 9.8nC @ 10V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 3A
- Supplier Device Package :
- TO-263 (IXTA)
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation-Max :
- 70W Tc
- Polarity/Channel Type :
- N-Channel
- Series :
- PolarHV™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-263AB
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 70W (Tc)
- Manufacturer :
- IXYS Corporation
- Terminal Form :
- Gull wing
- Number of Terminals :
- 2
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Number of Pins :
- 3
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 411pF @ 25V
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Package :
- Tube
- Datasheets
- IXTA3N60P

N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA3N60P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 411pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTA3N60P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a 600V drain to source voltage (Vdss)
IXTA3N60P Applications
There are a lot of IXYS
IXTA3N60P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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