IXTA3N60P

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Mfr.Part #
IXTA3N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 3A TO263
Stock
70
In Stock :
70

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
PolarHV™
Polarity/Channel Type :
N-Channel
Voltage - Rated DC :
600V
Current Rating :
3A
Avalanche Energy Rating (Eas) :
100 mJ
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
3A
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
FET Feature :
--
DS Breakdown Voltage-Min :
600 V
Continuous Drain Current (ID) :
3A
Supplier Device Package :
TO-263 (IXTA)
Power Dissipation (Max) :
70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
411pF @ 25V
Power Dissipation-Max :
70W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS Corporation
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
2
Published :
2006
Lead Free :
Lead Free
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Pin Count :
4
JEDEC-95 Code :
TO-263AB
Turn-Off Delay Time :
58 ns
Surface Mount :
yes
Power Dissipation :
70W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tube
RoHS Status :
RoHS Compliant
Pbfree Code :
yes
Mount :
Surface Mount
Terminal Position :
Single
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Rise Time :
25ns
Rds On (Max) @ Id, Vgs :
2.9 Ω @ 500mA, 10V
Transistor Application :
SWITCHING
Reach Compliance Code :
not_compliant
Pulsed Drain Current-Max (IDM) :
6A
FET Type :
N-Channel
Fall Time (Typ) :
22 ns
Terminal Finish :
Matte Tin (Sn)
Product Status :
Obsolete
Gate to Source Voltage (Vgs) :
30V
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
600V
Element Configuration :
Single
Factory Lead Time :
8 Weeks
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JESD-609 Code :
e3
Base Product Number :
IXTA3
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
600V
Terminal Form :
Gull wing
Number of Terminals :
2
Drain-source On Resistance-Max :
2.9 Ω
Datasheets
IXTA3N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA3N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, IXTA3N60P pinout, IXTA3N60P datasheet PDF, IXTA3N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA3N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA3N60P


N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA3N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 411pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTA3N60P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a 600V drain to source voltage (Vdss)


IXTA3N60P Applications


There are a lot of IXYS
IXTA3N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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