IXTA3N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-263 (IXTA)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED

Published :

2006

Vgs(th) (Max) @ Id :

5.5V @ 50μA

Rise Time :

15ns

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

3.6A

Avalanche Energy Rating (Eas) :

180 mJ

Number of Pins :

3

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

2Ohm

Manufacturer :

IXYS Corporation

JEDEC-95 Code :

TO-263AB

Power Dissipation :

70W

Turn-Off Delay Time :

38 ns

Pulsed Drain Current-Max (IDM) :

8A

Element Configuration :

Single

Current Rating :

3A

Surface Mount :

yes

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

30V

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.8A, 10V

Base Product Number :

IXTA3

Case Connection :

DRAIN

Number of Elements :

1

Power Dissipation-Max :

70W Tc

Package Shape :

RECTANGULAR

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 10V

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

500V

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

409pF @ 25V

Pin Count :

4

Pbfree Code :

yes

DS Breakdown Voltage-Min :

500 V

Number of Terminals :

2

Fall Time (Typ) :

12 ns

Lead Free :

Lead Free

FET Type :

N-Channel

Series :

PolarHV™

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

70W (Tc)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

500V

Operating Mode :

ENHANCEMENT MODE