IXTA3N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

2

Number of Terminations :

2

Qualification Status :

Not Qualified

Pin Count :

4

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

500V

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Series :

PolarHV™

Turn-Off Delay Time :

38 ns

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Voltage - Rated DC :

500V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

3.6A

Supplier Device Package :

TO-263 (IXTA)

Drain-source On Resistance-Max :

2Ohm

Drain to Source Breakdown Voltage :

500V

Pbfree Code :

yes

Vgs (Max) :

±30V

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

8A

Vgs(th) (Max) @ Id :

5.5V @ 50μA

Packaging :

Tube

Number of Elements :

1

Package :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

3A

JEDEC-95 Code :

TO-263AB

Fall Time (Typ) :

12 ns

Power Dissipation :

70W

DS Breakdown Voltage-Min :

500 V

Published :

2006

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

180 mJ

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 10V

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

409pF @ 25V

Manufacturer :

IXYS Corporation

Terminal Position :

Single

Power Dissipation-Max :

70W Tc

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Surface Mount :

yes

Base Product Number :

IXTA3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Product Status :

Obsolete

Reach Compliance Code :

not_compliant

Power Dissipation (Max) :

70W (Tc)

FET Feature :

--

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.8A, 10V

Terminal Form :

Gull wing