IXTA3N150HV

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Max Power Dissipation :

250 W

Height :

4.9 mm

Max Operating Temperature :

150 °C

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

1.5 kV

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

1500V

Reach Compliance Code :

not_compliant

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Product Status :

Active

FET Type :

N-Channel

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

38.6nC @ 10V

Mounting Style :

SMD/SMT

Package :

Tube

Brand :

IXYS

Drain to Source Resistance :

7.3 Ω

Packaging :

Tube

Power Dissipation (Max) :

250W (Tc)

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Rise Time :

21 ns

Mount :

Surface Mount

Min Operating Temperature :

-55 °C

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

1375pF @ 25V

Power Dissipation-Max :

250W Tc

RoHS :

Details

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On Max :

7.3 Ω

Turn-Off Delay Time :

42 ns

Base Product Number :

IXTA3

Transistor Polarity :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

24 Weeks

Turn-On Delay Time :

19 ns

Published :

2005

Transistor Type :

1 N-Channel

Continuous Drain Current (ID) :

3A

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

7.3 Ω @ 1.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-263

Power Dissipation :

250 W

FET Feature :

--

Gate to Source Voltage (Vgs) :

30 V

Vgs (Max) :

±30V

Series :

--

Input Capacitance :

1.375 nF

Max Junction Temperature (Tj) :

150 °C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Mode :

Enhancement

Subcategory :

MOSFETs