IXTA3N110

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

4 Ω

Product Type :

MOSFET

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 250μA

Minimum Operating Temperature :

- 55 C

Drain Current-Max (Abs) (ID) :

3A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

150W Tc

Vgs (Max) :

±20V

FET Type :

N-Channel

Max Operating Temperature :

150 °C

Drain to Source Resistance :

4 Ω

Drain to Source Breakdown Voltage :

1.1kV

Height :

4.5 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Drain to Source Voltage (Vdss) :

1100V

Product Status :

Obsolete

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Transistor Type :

1 N-Channel

Rise Time :

15ns

Pulsed Drain Current-Max (IDM) :

12A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-263AB

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

700 mJ

Element Configuration :

Single

Number of Terminals :

2

Packaging :

Tube

Length :

9.9 mm

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Series :

--

Pbfree Code :

yes

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

JESD-30 Code :

R-PSSO-G2

Product Category :

MOSFET

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

150W

Turn-Off Delay Time :

32 ns

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Mode :

Enhancement

RoHS :

Compliant

Pin Count :

4

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Published :

2001

JESD-609 Code :

e3

Rds On Max :

4 Ω

Surface Mount :

yes

Mounting Style :

SMD/SMT

Input Capacitance :

1.35 nF

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

3A

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Base Product Number :

IXTA3

DS Breakdown Voltage-Min :

1100 V

Resistance :

4.5Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

4 Ω @ 1.5A, 10V

Fall Time (Typ) :

18 ns

Factory Lead Time :

28 Weeks

Min Operating Temperature :

-55 °C

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Subcategory :

MOSFETs

Terminal Position :

Single

Mount :

Surface Mount

Power Dissipation (Max) :

150W (Tc)

Brand :

IXYS

Configuration :

Single

Max Power Dissipation :

200 W

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Width :

9.2 mm

Supplier Device Package :

TO-263 (IXTA)