IXTA3N110

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

--

Channel Mode :

Enhancement

Factory Lead Time :

28 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

4 Ω @ 1.5A, 10V

Qualification Status :

Not Qualified

Max Operating Temperature :

150 °C

Number of Elements :

1

Number of Terminals :

2

Terminal Position :

Single

JESD-609 Code :

e3

Drain to Source Resistance :

4 Ω

Terminal Finish :

Matte Tin (Sn)

Mounting Style :

SMD/SMT

Width :

9.2 mm

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

700 mJ

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Surface Mount :

yes

Fall Time (Typ) :

18 ns

Drain Current-Max (Abs) (ID) :

3A

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

1100V

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

12A

Power Dissipation (Max) :

150W (Tc)

Base Product Number :

IXTA3

Package Shape :

RECTANGULAR

Power Dissipation-Max :

150W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Min Operating Temperature :

-55 °C

FET Feature :

--

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Package :

Tube

Published :

2001

RoHS Status :

ROHS3 Compliant

Product Status :

Obsolete

Minimum Operating Temperature :

- 55 C

Pin Count :

4

Number of Terminations :

2

Drain to Source Breakdown Voltage :

1.1kV

Transistor Type :

1 N-Channel

Case Connection :

DRAIN

Length :

9.9 mm

Drain-source On Resistance-Max :

4 Ω

Supplier Device Package :

TO-263 (IXTA)

Pbfree Code :

yes

RoHS :

Compliant

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

200 W

Polarity/Channel Type :

N-Channel

Height :

4.5 mm

DS Breakdown Voltage-Min :

1100 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Power Dissipation :

150W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Rds On Max :

4 Ω

Subcategory :

MOSFETs

Brand :

IXYS

Input Capacitance :

1.35 nF

Turn-Off Delay Time :

32 ns

Continuous Drain Current (ID) :

3A

Number of Channels :

1 Channel

JEDEC-95 Code :

TO-263AB

Operating Mode :

ENHANCEMENT MODE

Maximum Operating Temperature :

+ 150 C

Resistance :

4.5Ohm

Operating Temperature :

-55°C~150°C TJ

Rise Time :

15ns

Element Configuration :

Single

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Manufacturer :

IXYS

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel