IXTA3N100P
- Mfr.Part #
- IXTA3N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 3A TO263
- Stock
- 8,305
- In Stock :
- 8,305
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXTA3
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Mounting Type :
- Surface Mount
- Rise Time :
- 27ns
- Transistor Application :
- SWITCHING
- Height :
- 4.83 mm
- Drain to Source Voltage (Vdss) :
- 1000V
- Packaging :
- Tube
- Max Operating Temperature :
- 150 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 125W
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Min Operating Temperature :
- -55 °C
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- FET Feature :
- --
- Terminal Form :
- Gull wing
- Supplier Device Package :
- TO-263 (IXTA)
- Max Power Dissipation :
- 125 W
- Product Category :
- MOSFET
- Factory Lead Time :
- 28 Weeks
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 125W (Tc)
- Rds On (Max) @ Id, Vgs :
- 4.8 Ω @ 1.5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- DS Breakdown Voltage-Min :
- 1000 V
- Pulsed Drain Current-Max (IDM) :
- 6A
- Drain to Source Breakdown Voltage :
- 1kV
- Power Dissipation-Max (Abs) :
- 125 W
- Input Capacitance :
- 1.1 nF
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- PolarVHV™
- Continuous Drain Current (ID) :
- 3A
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Width :
- 9.65 mm
- JEDEC-95 Code :
- TO-263AB
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Terminals :
- 2
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSSO-G2
- Drain-source On Resistance-Max :
- 4.8 Ω
- Transistor Type :
- 1 N-Channel
- Drain Current-Max (Abs) (ID) :
- 3A
- Drain to Source Resistance :
- 4.8 Ω
- FET Type :
- N-Channel
- Configuration :
- Single
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Length :
- 10.41 mm
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Mounting Style :
- SMD/SMT
- Terminal Position :
- Single
- Channel Mode :
- Enhancement
- RoHS :
- Compliant
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 125W Tc
- Number of Channels :
- 1 Channel
- Rds On Max :
- 4.8 Ω
- Fall Time (Typ) :
- 29 ns
- Turn-Off Delay Time :
- 75 ns
- Pbfree Code :
- yes
- Product Status :
- Active
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- not_compliant
- Package :
- Tube
- Datasheets
- IXTA3N100P

N-Channel Tube 4.8 Ω @ 1.5A, 10V ±20V 1100pF @ 25V 39nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA3N100P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 1100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 6A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 4.8 Ω.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTA3N100P Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 6A.
single MOSFETs transistor is 4.8 Ω
a 1000V drain to source voltage (Vdss)
IXTA3N100P Applications
There are a lot of IXYS
IXTA3N100P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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