IXTA3N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

1kV

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

4.8 Ω

FET Feature :

--

Rise Time :

27ns

Drain to Source Voltage (Vdss) :

1000V

Base Product Number :

IXTA3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±20V

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

3A

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

75 ns

JESD-609 Code :

e3

FET Type :

N-Channel

Drain-source On Resistance-Max :

4.8 Ω

Element Configuration :

Single

Lead Free :

Lead Free

Pbfree Code :

yes

Rds On Max :

4.8 Ω

Package Shape :

RECTANGULAR

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Product Status :

Active

Case Connection :

DRAIN

Product Type :

MOSFET

Min Operating Temperature :

-55 °C

Mount :

Surface Mount

Width :

9.65 mm

Factory Lead Time :

28 Weeks

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Mounting Style :

SMD/SMT

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Max Operating Temperature :

150 °C

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Number of Terminals :

2

Number of Elements :

1

Continuous Drain Current (ID) :

3A

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Supplier Device Package :

TO-263 (IXTA)

Transistor Element Material :

SILICON

Input Capacitance :

1.1 nF

Length :

10.41 mm

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-263AB

Surface Mount :

yes

Configuration :

Single

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Series :

PolarVHV™

Fall Time (Typ) :

29 ns

Product Category :

MOSFET

JESD-30 Code :

R-PSSO-G2

Brand :

IXYS

Channel Mode :

Enhancement

RoHS :

Compliant

Power Dissipation-Max (Abs) :

125 W

Power Dissipation :

125W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

125W (Tc)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

125W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

6A

Pin Count :

4

Height :

4.83 mm

DS Breakdown Voltage-Min :

1000 V

Max Power Dissipation :

125 W

Package :

Tube

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel

Avalanche Energy Rating (Eas) :

200 mJ

Number of Channels :

1 Channel