IXTA3N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

FET Feature :

--

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Supplier Device Package :

TO-263 (IXTA)

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

4.8 Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

200 mJ

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Channel Mode :

Enhancement

Height :

4.83 mm

Power Dissipation :

125W

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Case Connection :

DRAIN

Package :

Tube

Turn-Off Delay Time :

75 ns

Number of Elements :

1

JEDEC-95 Code :

TO-263AB

Mount :

Surface Mount

Mounting Style :

SMD/SMT

Rds On Max :

4.8 Ω

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

1000V

Packaging :

Tube

DS Breakdown Voltage-Min :

1000 V

Base Product Number :

IXTA3

Terminal Form :

Gull wing

Product Type :

MOSFET

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Drain Current-Max (Abs) (ID) :

3A

Published :

2008

Series :

PolarVHV™

Manufacturer :

IXYS

Number of Terminals :

2

Rise Time :

27ns

Factory Lead Time :

28 Weeks

Transistor Application :

SWITCHING

Length :

10.41 mm

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

125 W

Product Status :

Active

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Power Dissipation (Max) :

125W (Tc)

JESD-30 Code :

R-PSSO-G2

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Reach Compliance Code :

not_compliant

Minimum Operating Temperature :

- 55 C

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±20V

Product Category :

MOSFET

Pin Count :

4

Max Operating Temperature :

150 °C

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Min Operating Temperature :

-55 °C

RoHS :

Compliant

Continuous Drain Current (ID) :

3A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

125W Tc

Drain to Source Resistance :

4.8 Ω

Element Configuration :

Single

Width :

9.65 mm

Drain to Source Breakdown Voltage :

1kV

Input Capacitance :

1.1 nF

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Pulsed Drain Current-Max (IDM) :

6A

Fall Time (Typ) :

29 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

125 W

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Transistor Type :

1 N-Channel