IXTA36P15P

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Mfr.Part #
IXTA36P15P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 150V 36A TO263
Stock
1,811
In Stock :
1,811

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
15 ns
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Terminal Form :
Gull wing
Length :
9.65 mm
JESD-609 Code :
e3
FET Type :
P-Channel
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Drain to Source Resistance :
110 mΩ
Turn-Off Delay Time :
36 ns
Product Category :
MOSFET
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Power Dissipation (Max) :
300W (Tc)
Product Status :
Active
Continuous Drain Current (ID) :
36A
Product Type :
MOSFET
Manufacturer :
IXYS
Transistor Type :
1 P-Channel
Rds On (Max) @ Id, Vgs :
110m Ω @ 18A, 10V
Maximum Operating Temperature :
+ 150 C
Radiation Hardening :
No
Packaging :
Tube
Terminal Finish :
PURE TIN
Max Operating Temperature :
150 °C
Number of Elements :
1
Configuration :
Single
Power Dissipation :
300W
Tradename :
PolarP
Gate to Source Voltage (Vgs) :
20V
Mounting Style :
SMD/SMT
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Pulsed Drain Current-Max (IDM) :
90A
Rise Time :
31ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
2
Channel Mode :
Enhancement
Input Capacitance :
3.1 nF
Pin Count :
4
Reach Compliance Code :
Unknown
Published :
2009
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Power Dissipation-Max :
300W Tc
JESD-30 Code :
R-PSSO-G2
Width :
10.41 mm
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Rds On Max :
110 mΩ
Input Capacitance (Ciss) (Max) @ Vds :
3100pF @ 25V
Transistor Polarity :
P-Channel
Pbfree Code :
yes
Height :
4.83 mm
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS :
Compliant
Drain to Source Voltage (Vdss) :
150V
Base Product Number :
IXTA36
Mount :
Surface Mount
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Factory Lead Time :
28 Weeks
Max Power Dissipation :
300 W
Min Operating Temperature :
-55 °C
Series :
PolarP™
Lead Free :
Lead Free
Supplier Device Package :
TO-263 (IXTA)
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
FET Feature :
--
Type :
PolarP Power MOSFET
Drain to Source Breakdown Voltage :
-150V
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXTA36P15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA36P15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Type:PolarP Power MOSFET, IXTA36P15P pinout, IXTA36P15P datasheet PDF, IXTA36P15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA36P15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA36P15P


P-Channel Tube 110m Ω @ 18A, 10V ±20V 3100pF @ 25V 55nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA36P15P Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -150V.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 90A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 110 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA36P15P Features


a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 90A.
single MOSFETs transistor is 110 mΩ
a 150V drain to source voltage (Vdss)


IXTA36P15P Applications


There are a lot of IXYS
IXTA36P15P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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