IXTA36N30P
- Mfr.Part #
- IXTA36N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 36A TO263
- Stock
- 7,049
- In Stock :
- 7,049
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Product Status :
- Active
- Series :
- PolarHT™
- Drain-source On Resistance-Max :
- 0.11 Ω
- Mounting Type :
- Surface Mount
- Rise Time :
- 30ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 300V
- Continuous Drain Current Id :
- 36A
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 300V
- Transistor Polarity :
- N-Channel
- Qualification :
- -
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-263AB
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Package :
- Tube
- Fall Time (Typ) :
- 28 ns
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 300W
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 4
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Mount :
- Surface Mount
- Subcategory :
- MOSFETs
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Package Shape :
- RECTANGULAR
- Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Channel Type :
- N Channel
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 18A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 110mOhm
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Surface Mount :
- yes
- Length :
- 9.9 mm
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 4.5 mm
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-263 (IXTA)
- Turn-Off Delay Time :
- 97 ns
- Continuous Drain Current (ID) :
- 36A
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 90A
- Maximum Operating Temperature :
- + 150 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 300W Tc
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 300 V
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 28 Weeks
- Mounting Style :
- SMD/SMT
- Width :
- 9.2 mm
- Power Dissipation (Max) :
- 300W (Tc)
- FET Feature :
- --
- Brand :
- IXYS
- Number of Terminals :
- 2
- ECCN Code :
- EAR99
- Base Product Number :
- IXTA36
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Transistor Application :
- SWITCHING
- Datasheets
- IXTA36N30P

N-Channel Tube 110m Ω @ 18A, 10V ±30V 2250pF @ 25V 70nC @ 10V 300V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA36N30P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 36A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 300V, and this device has a drainage-to-source breakdown voltage of 300VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 97 ns.Peak drain current is 90A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 300 V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA36N30P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 97 ns
based on its rated peak drain current 90A.
a 300V drain to source voltage (Vdss)
IXTA36N30P Applications
There are a lot of IXYS
IXTA36N30P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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