IXTA36N30P

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Mfr.Part #
IXTA36N30P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 300V 36A TO263
Stock
7,049
In Stock :
7,049

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Product Status :
Active
Series :
PolarHT™
Drain-source On Resistance-Max :
0.11 Ω
Mounting Type :
Surface Mount
Rise Time :
30ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
300V
Continuous Drain Current Id :
36A
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
300V
Transistor Polarity :
N-Channel
Qualification :
-
Product Category :
MOSFET
Product Type :
MOSFET
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-263AB
Terminal Finish :
Matte Tin (Sn)
Element Configuration :
Single
Package :
Tube
Fall Time (Typ) :
28 ns
Reach Compliance Code :
not_compliant
Power Dissipation :
300W
JESD-30 Code :
R-PSSO-G2
Pin Count :
4
Manufacturer :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Mount :
Surface Mount
Subcategory :
MOSFETs
Channel Mode :
Enhancement
Avalanche Energy Rating (Eas) :
1000 mJ
Package Shape :
RECTANGULAR
Configuration :
Single
Transistor Type :
1 N-Channel
Channel Type :
N Channel
Rds On (Max) @ Id, Vgs :
110m Ω @ 18A, 10V
Operating Temperature :
-55°C~150°C TJ
Resistance :
110mOhm
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
Surface Mount :
yes
Length :
9.9 mm
Terminal Position :
Single
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JESD-609 Code :
e3
Packaging :
Tube
Number of Channels :
1 Channel
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
4.5 mm
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
TO-263 (IXTA)
Turn-Off Delay Time :
97 ns
Continuous Drain Current (ID) :
36A
Published :
2006
Pulsed Drain Current-Max (IDM) :
90A
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
300W Tc
Number of Elements :
1
DS Breakdown Voltage-Min :
300 V
Gate to Source Voltage (Vgs) :
30V
Vgs (Max) :
±30V
Factory Lead Time :
28 Weeks
Mounting Style :
SMD/SMT
Width :
9.2 mm
Power Dissipation (Max) :
300W (Tc)
FET Feature :
--
Brand :
IXYS
Number of Terminals :
2
ECCN Code :
EAR99
Base Product Number :
IXTA36
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Transistor Application :
SWITCHING
Datasheets
IXTA36N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA36N30P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, IXTA36N30P pinout, IXTA36N30P datasheet PDF, IXTA36N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA36N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA36N30P


N-Channel Tube 110m Ω @ 18A, 10V ±30V 2250pF @ 25V 70nC @ 10V 300V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA36N30P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 36A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 300V, and this device has a drainage-to-source breakdown voltage of 300VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 97 ns.Peak drain current is 90A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 300 V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTA36N30P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 97 ns
based on its rated peak drain current 90A.
a 300V drain to source voltage (Vdss)


IXTA36N30P Applications


There are a lot of IXYS
IXTA36N30P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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