IXTA32P20T
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- Mfr.Part #
- IXTA32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO263
- Stock
- 1,357
- In Stock ：
- 1,357
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Base Product Number :
- IXTA32
- Power Dissipation-Max :
- 300W Tc
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Factory Lead Time :
- 28 Weeks
- Power Dissipation (Max) :
- 300W (Tc)
- Vgs (Max) :
- ±15V
- RoHS :
- Details
- FET Feature :
- --
- Transistor Type :
- 1 P-Channel
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2010
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Active
- Brand :
- IXYS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-263 (IXTA)
- Number of Channels :
- 1 Channel
- Package :
- Tube
- ECCN Code :
- EAR99
- Series :
- TrenchP™
- DS Breakdown Voltage-Min :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Pulsed Drain Current-Max (IDM) :
- 96A
- Continuous Drain Current (ID) :
- 32A
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain-source On Resistance-Max :
- 0.13Ohm
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tube
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Transistor Polarity :
- P-Channel
- Terminal Form :
- Gull wing
- Rise Time :
- 15 ns
- Product Category :
- MOSFET
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXTA32P20T
P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA32P20T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 14500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTA32P20T Applications
There are a lot of IXYS
IXTA32P20T applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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