IXTA32P20T
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- Mfr.Part #
- IXTA32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO263
- Stock
- 1,357
- In Stock ：
- 1,357
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Drain-source On Resistance-Max :
- 0.13Ohm
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 200V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Additional Feature :
- AVALANCHE RATED
- Transistor Type :
- 1 P-Channel
- Factory Lead Time :
- 28 Weeks
- RoHS :
- Details
- Terminal Form :
- Gull wing
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 32A
- JESD-609 Code :
- e3
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 300W (Tc)
- Number of Channels :
- 1 Channel
- Series :
- TrenchP™
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 300W Tc
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Unknown
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Transistor Polarity :
- P-Channel
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2010
- Terminal Finish :
- Matte Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±15V
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 96A
- DS Breakdown Voltage-Min :
- 200V
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Base Product Number :
- IXTA32
- Supplier Device Package :
- TO-263 (IXTA)
- Terminal Position :
- Single
- Brand :
- IXYS
- Pin Count :
- 3
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 15 ns
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- Product Status :
- Active
- Datasheets
- IXTA32P20T
P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA32P20T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 14500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTA32P20T Applications
There are a lot of IXYS
IXTA32P20T applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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