IXTA32N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

24 Weeks

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

32 A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

72mOhm @ 16A, 10V

Max Operating Temperature :

175°C

Number of Elements :

1

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Manufacturer :

IXYS

Product Type :

MOSFET

Case Connection :

DRAIN

Surface Mount :

yes

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Tradename :

HiPerFET

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

200V

Product Category :

MOSFET

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Mounting Style :

SMD/SMT

Type :

Trench Power MOSFET

FET Feature :

--

Height :

4.83 mm

Drain-source On Resistance-Max :

0.072 Ω

Power Dissipation (Max) :

200W (Tc)

Packaging :

Tube

Vgs (Max) :

±20V

Brand :

IXYS

DS Breakdown Voltage-Min :

200 V

Power Dissipation :

200W

Qualification Status :

Not Qualified

Mount :

Surface Mount

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Min Operating Temperature :

-55°C

Fall Time (Typ) :

31 ns

Subcategory :

MOSFETs

Length :

9.65 mm

Power Dissipation-Max (Abs) :

200 W

Continuous Drain Current (ID) :

32A

ECCN Code :

EAR99

FET Type :

N-Channel

JESD-609 Code :

e3

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 25V

Maximum Operating Temperature :

+ 175 C

Avalanche Energy Rating (Eas) :

250 mJ

Pulsed Drain Current-Max (IDM) :

64 A

Gate to Source Voltage (Vgs) :

20V

Width :

10.41 mm

Supplier Device Package :

TO-263 (IXTA)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2010

Number of Terminals :

2

Base Product Number :

IXTA32

Rise Time :

18ns

Rds On Max :

72 mΩ

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Resistance :

72mOhm

Turn-Off Delay Time :

55 ns

Polarity/Channel Type :

N-Channel

Series :

--

Drain to Source Breakdown Voltage :

200V

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Input Capacitance :

1.76nF

Package :

Tube

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-263AB

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Mounting Type :

Surface Mount

Power Dissipation-Max :

200W Tc

Drain to Source Resistance :

78mOhm