IXTA300N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Drain to Source Voltage (Vdss) :

40V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Base Product Number :

IXTA300

Reach Compliance Code :

not_compliant

Product Category :

MOSFET

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Pin Count :

4

Published :

2008

Pulsed Drain Current-Max (IDM) :

900A

Continuous Drain Current (ID) :

300A

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

FET Feature :

--

Terminal Form :

Gull wing

Series :

TrenchT2™

Brand :

IXYS

Tradename :

HiPerFET

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Product Type :

MOSFET

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power Dissipation :

480W

Transistor Type :

1 N-Channel

Surface Mount :

yes

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

40 V

Transistor Application :

SWITCHING

Manufacturer :

IXYS

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

10700pF @ 25V

Power Dissipation (Max) :

480W (Tc)

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Style :

SMD/SMT

Vgs (Max) :

±20V

Number of Terminals :

2

Power Dissipation-Max :

480W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

300 A

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Drain-source On Resistance-Max :

0.0025Ohm

JEDEC-95 Code :

TO-263AB

Number of Terminations :

2

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 175 C

Drain to Source Breakdown Voltage :

40V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

480 W

Avalanche Energy Rating (Eas) :

600 mJ

Supplier Device Package :

TO-263 (IXTA)

Factory Lead Time :

28 Weeks

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 500mA, 10V

Package Shape :

RECTANGULAR

Terminal Finish :

Matte Tin (Sn)