IXTA300N04T2-7

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Mfr.Part #
IXTA300N04T2-7
Manufacturer
Littelfuse
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Datasheet
Download
Description
MOSFET N-CH 40V 300A TO263-7
Stock
21,659
In Stock :
21,659

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
10700pF @ 25V
Product Category :
MOSFET
Transistor Application :
SWITCHING
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate to Source Voltage (Vgs) :
20V
Case Connection :
DRAIN
JEDEC-95 Code :
TO-263
Drain to Source Voltage (Vdss) :
40V
Rds On (Max) @ Id, Vgs :
2.5m Ω @ 50A, 10V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Transistor Type :
1 N-Channel
Drain to Source Breakdown Voltage :
40V
Terminal Position :
Single
Transistor Element Material :
SILICON
Supplier Device Package :
TO-263-7 (IXTA..7)
Transistor Polarity :
N-Channel
Number of Elements :
1
Product Type :
MOSFET
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Tradename :
HiPerFET
Operating Temperature :
-55°C~175°C TJ
DS Breakdown Voltage-Min :
40 V
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
300 A
Pin Count :
4
Element Configuration :
Single
Mounting Type :
Surface Mount
Reach Compliance Code :
Unknown
Surface Mount :
yes
Continuous Drain Current (ID) :
300A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
IXYS
Configuration :
Single
Series :
TrenchT2™
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
600 mJ
Number of Terminals :
6
JESD-609 Code :
e3
Product Status :
Active
Minimum Operating Temperature :
- 55 C
Number of Terminations :
6
Power Dissipation (Max) :
480W (Tc)
Package Shape :
RECTANGULAR
Number of Channels :
1 Channel
ECCN Code :
EAR99
Power Dissipation-Max (Abs) :
480 W
Drain-source On Resistance-Max :
0.0025Ohm
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Package :
Tube
Mounting Style :
SMD/SMT
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
900A
Maximum Operating Temperature :
+ 175 C
Power Dissipation-Max :
480W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXTA300
Power Dissipation :
480W
Manufacturer :
IXYS
Published :
2008
Packaging :
Tube
Terminal Finish :
PURE TIN
JESD-30 Code :
R-PSSO-G6
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
Datasheets
IXTA300N04T2-7
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA300N04T2-7 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-7, D2Pak (6 Leads + Tab), TO-263CB, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:6, Number of Channels:1 Channel, IXTA300N04T2-7 pinout, IXTA300N04T2-7 datasheet PDF, IXTA300N04T2-7 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA300N04T2-7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA300N04T2-7


N-Channel Tube 2.5m Ω @ 50A, 10V ±20V 10700pF @ 25V 145nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTA300N04T2-7 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 600 mJ.The maximum input capacitance of this device is 10700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 300A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.As shown in the table below, the drain current of this device is 300 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 900A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTA300N04T2-7 Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 300A
a drain-to-source breakdown voltage of 40V voltage
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)


IXTA300N04T2-7 Applications


There are a lot of IXYS
IXTA300N04T2-7 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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