IXTA2R4N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.65 mm

Brand :

IXYS

Drain-source On Resistance-Max :

7.5 Ω

Height :

4.83 mm

RoHS :

Details

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

1200V

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Published :

2008

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

25ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Surface Mount :

yes

Package :

Tube

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Power Dissipation (Max) :

125W (Tc)

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Series :

Polar™

Input Capacitance (Ciss) (Max) @ Vds :

1207pF @ 25V

JESD-609 Code :

e3

Packaging :

Tube

Pin Count :

4

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Terminals :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Type :

MOSFET

Length :

10.41 mm

Avalanche Energy Rating (Eas) :

200 mJ

Turn-Off Delay Time :

70 ns

FET Feature :

--

Configuration :

Single

Continuous Drain Current (ID) :

2.4A

Pulsed Drain Current-Max (IDM) :

6A

Number of Channels :

1 Channel

Power Dissipation :

125W

Qualification Status :

Not Qualified

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

IXYS

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

28 Weeks

Power Dissipation-Max :

125W Tc

Mount :

Surface Mount

JEDEC-95 Code :

TO-263AB

Pbfree Code :

yes

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-263 (IXTA)

Drain Current-Max (Abs) (ID) :

2.4 A

Base Product Number :

IXTA2

Drain to Source Breakdown Voltage :

1.2kV

Transistor Polarity :

N-Channel

Power Dissipation-Max (Abs) :

125 W

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

FET Type :

N-Channel

Terminal Form :

Gull wing

Fall Time (Typ) :

32 ns

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

DS Breakdown Voltage-Min :

1200 V