IXTA2N80P
- Mfr.Part #
- IXTA2N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO263
- Stock
- 17,894
- In Stock :
- 17,894
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 10.6nC @ 10V
- Number of Terminals :
- 2
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 800 V
- Published :
- 2006
- Rise Time :
- 35ns
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Supplier Device Package :
- TO-263 (IXTA)
- Element Configuration :
- Single
- Package :
- Tube
- Mounting Type :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Power Dissipation (Max) :
- 70W (Tc)
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Polarity/Channel Type :
- N-Channel
- RoHS :
- Compliant
- Drain to Source Breakdown Voltage :
- 800V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 2A
- DS Breakdown Voltage-Min :
- 800 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS Corporation
- Rds On Max :
- 6 Ω
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1A, 10V
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 53 ns
- Max Power Dissipation :
- 70 W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Product Status :
- Obsolete
- Min Operating Temperature :
- -55 °C
- Series :
- PolarHV™
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-263AB
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 4A
- Power Dissipation :
- 70W
- Input Capacitance :
- 440 pF
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 70W Tc
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 2A
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Max Operating Temperature :
- 150 °C
- Qualification Status :
- Not Qualified
- Drain to Source Resistance :
- 6 Ω
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Fall Time (Typ) :
- 28 ns
- Packaging :
- Tube
- Base Product Number :
- IXTA2
- Drain-source On Resistance-Max :
- 6Ohm
- Surface Mount :
- yes
- Reach Compliance Code :
- not_compliant
- Datasheets
- IXTA2N80P

N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800 V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA2N80P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 100 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 440pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2A.When the device is turned off, a turn-off delay time of 53 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 4A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 6 Ω, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800 V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTA2N80P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
single MOSFETs transistor is 6 Ω
a 800 V drain to source voltage (Vdss)
IXTA2N80P Applications
There are a lot of IXYS
IXTA2N80P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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