IXTA2N80P

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Mfr.Part #
IXTA2N80P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 2A TO263
Stock
17,894
In Stock :
17,894

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
10.6nC @ 10V
Number of Terminals :
2
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
800 V
Published :
2006
Rise Time :
35ns
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Supplier Device Package :
TO-263 (IXTA)
Element Configuration :
Single
Package :
Tube
Mounting Type :
Surface Mount
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
100 mJ
Power Dissipation (Max) :
70W (Tc)
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Polarity/Channel Type :
N-Channel
RoHS :
Compliant
Drain to Source Breakdown Voltage :
800V
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
2A
DS Breakdown Voltage-Min :
800 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS Corporation
Rds On Max :
6 Ω
Rds On (Max) @ Id, Vgs :
6 Ω @ 1A, 10V
Mount :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Terminal Position :
Single
Vgs (Max) :
±30V
Turn-Off Delay Time :
53 ns
Max Power Dissipation :
70 W
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Product Status :
Obsolete
Min Operating Temperature :
-55 °C
Series :
PolarHV™
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-263AB
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
4A
Power Dissipation :
70W
Input Capacitance :
440 pF
FET Type :
N-Channel
Number of Terminations :
2
Power Dissipation-Max :
70W Tc
RoHS Status :
RoHS Compliant
Terminal Form :
Gull wing
Pin Count :
4
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
2A
Terminal Finish :
Matte Tin (Sn)
Transistor Application :
SWITCHING
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Max Operating Temperature :
150 °C
Qualification Status :
Not Qualified
Drain to Source Resistance :
6 Ω
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
30V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Fall Time (Typ) :
28 ns
Packaging :
Tube
Base Product Number :
IXTA2
Drain-source On Resistance-Max :
6Ohm
Surface Mount :
yes
Reach Compliance Code :
not_compliant
Datasheets
IXTA2N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N80P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA2N80P pinout, IXTA2N80P datasheet PDF, IXTA2N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA2N80P


N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800 V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA2N80P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 100 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 440pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2A.When the device is turned off, a turn-off delay time of 53 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 4A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 6 Ω, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800 V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTA2N80P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
single MOSFETs transistor is 6 Ω
a 800 V drain to source voltage (Vdss)


IXTA2N80P Applications


There are a lot of IXYS
IXTA2N80P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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