IXTA2N80
- Mfr.Part #
- IXTA2N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO263
- Stock
- 22,068
- In Stock :
- 22,068
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 54W Tc
- Package :
- Box
- Drain-source On Resistance-Max :
- 6.2 Ω
- Base Product Number :
- IXTA2
- Pulsed Drain Current-Max (IDM) :
- 8A
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Package Shape :
- RECTANGULAR
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Terminal Position :
- Single
- Drain to Source Resistance :
- 6.2 Ω
- Rise Time :
- 18ns
- Number of Elements :
- 1
- Manufacturer :
- IXYS Corporation
- Input Capacitance :
- 440 pF
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Series :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 2A
- Number of Terminals :
- 2
- Pin Count :
- 4
- Packaging :
- Bulk
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- FET Type :
- N-Channel
- Published :
- 2003
- Drain to Source Voltage (Vdss) :
- 800V
- Number of Pins :
- 3
- Rds On Max :
- 6.2 Ω
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 54W (Tc)
- Terminal Finish :
- Matte Tin (Sn)
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 800V
- Turn-Off Delay Time :
- 30 ns
- Power Dissipation :
- 54W
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Fall Time (Typ) :
- 15 ns
- Qualification Status :
- Not Qualified
- RoHS :
- Compliant
- Supplier Device Package :
- TO-263 (IXTA)
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150 °C
- JEDEC-95 Code :
- TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55 °C
- Drain Current-Max (Abs) (ID) :
- 2A
- Rds On (Max) @ Id, Vgs :
- 6.2 Ω @ 500mA, 10V
- DS Breakdown Voltage-Min :
- 800 V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Power Dissipation :
- 54 W
- Datasheets
- IXTA2N80

N-Channel Bulk 6.2 Ω @ 500mA, 10V ±20V 440pF @ 25V 22nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA2N80 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 440pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 800V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 8A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 6.2 Ω.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800 V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA2N80 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
single MOSFETs transistor is 6.2 Ω
a 800V drain to source voltage (Vdss)
IXTA2N80 Applications
There are a lot of IXYS
IXTA2N80 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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