IXTA2N80

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Mfr.Part #
IXTA2N80
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 2A TO263
Stock
22,068
In Stock :
22,068

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
54W Tc
Package :
Box
Drain-source On Resistance-Max :
6.2 Ω
Base Product Number :
IXTA2
Pulsed Drain Current-Max (IDM) :
8A
Case Connection :
DRAIN
Surface Mount :
yes
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
200 mJ
Terminal Position :
Single
Drain to Source Resistance :
6.2 Ω
Rise Time :
18ns
Number of Elements :
1
Manufacturer :
IXYS Corporation
Input Capacitance :
440 pF
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Series :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
2A
Number of Terminals :
2
Pin Count :
4
Packaging :
Bulk
Terminal Form :
Gull wing
Number of Terminations :
2
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
2A Tc
FET Type :
N-Channel
Published :
2003
Drain to Source Voltage (Vdss) :
800V
Number of Pins :
3
Rds On Max :
6.2 Ω
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Power Dissipation (Max) :
54W (Tc)
Terminal Finish :
Matte Tin (Sn)
Reach Compliance Code :
not_compliant
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
800V
Turn-Off Delay Time :
30 ns
Power Dissipation :
54W
Mount :
Surface Mount
Element Configuration :
Single
Fall Time (Typ) :
15 ns
Qualification Status :
Not Qualified
RoHS :
Compliant
Supplier Device Package :
TO-263 (IXTA)
FET Feature :
--
RoHS Status :
ROHS3 Compliant
Max Operating Temperature :
150 °C
JEDEC-95 Code :
TO-263AB
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Min Operating Temperature :
-55 °C
Drain Current-Max (Abs) (ID) :
2A
Rds On (Max) @ Id, Vgs :
6.2 Ω @ 500mA, 10V
DS Breakdown Voltage-Min :
800 V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Max Power Dissipation :
54 W
Datasheets
IXTA2N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N80 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA2N80 pinout, IXTA2N80 datasheet PDF, IXTA2N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA2N80


N-Channel Bulk 6.2 Ω @ 500mA, 10V ±20V 440pF @ 25V 22nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA2N80 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 440pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 800V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 8A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 6.2 Ω.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800 V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA2N80 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
single MOSFETs transistor is 6.2 Ω
a 800V drain to source voltage (Vdss)


IXTA2N80 Applications


There are a lot of IXYS
IXTA2N80 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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