IXTA2N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.2 Ω @ 500mA, 10V

Min Operating Temperature :

-55 °C

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Input Capacitance :

440 pF

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Rise Time :

18ns

Published :

2003

Transistor Element Material :

SILICON

Series :

--

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Power Dissipation-Max :

54W Tc

Drain-source On Resistance-Max :

6.2 Ω

Drain to Source Voltage (Vdss) :

800V

Fall Time (Typ) :

15 ns

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

200 mJ

Turn-Off Delay Time :

30 ns

Packaging :

Bulk

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

2A

Package :

Box

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Resistance :

6.2 Ω

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2A Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

54W

Base Product Number :

IXTA2

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

54W (Tc)

JEDEC-95 Code :

TO-263AB

Mounting Type :

Surface Mount

Product Status :

Active

Pbfree Code :

yes

Number of Terminals :

2

Manufacturer :

IXYS Corporation

JESD-30 Code :

R-PSSO-G2

RoHS :

Compliant

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

800V

Rds On Max :

6.2 Ω

Pulsed Drain Current-Max (IDM) :

8A

FET Feature :

--

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

800 V

Number of Pins :

3

Terminal Position :

Single

Supplier Device Package :

TO-263 (IXTA)

Mount :

Surface Mount

Max Power Dissipation :

54 W

Element Configuration :

Single

Max Operating Temperature :

150 °C

Number of Elements :

1

Continuous Drain Current (ID) :

2A

Package Shape :

RECTANGULAR