IXTA2N100P
- Mfr.Part #
- IXTA2N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 2A TO263
- Stock
- 292
- In Stock :
- 292
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- 1 N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 29ns
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- --
- Drain to Source Breakdown Voltage :
- 1kV
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 86W Tc
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- SMD/SMT
- Power Dissipation (Max) :
- 86W (Tc)
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 24.3nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 86W
- Drain-source On Resistance-Max :
- 7.5 Ω
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 4
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Minimum Operating Temperature :
- - 55 C
- Fall Time (Typ) :
- 27 ns
- Series :
- Polar™
- Product Type :
- MOSFET
- Surface Mount :
- yes
- Power Dissipation-Max (Abs) :
- 86 W
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Manufacturer :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- Drain Current-Max (Abs) (ID) :
- 2A
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Published :
- 2008
- Product Status :
- Active
- Width :
- 9.65 mm
- Turn-Off Delay Time :
- 80 ns
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Base Product Number :
- IXTA2
- Packaging :
- Tube
- Length :
- 10.41 mm
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 25V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-263 (IXTA)
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 5A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- JEDEC-95 Code :
- TO-263AB
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 2A
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 1000 V
- Mounting Type :
- Surface Mount
- Height :
- 4.83 mm
- Number of Terminals :
- 2
- Reach Compliance Code :
- not_compliant
- Datasheets
- IXTA2N100P

N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA2N100P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 655pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 5A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA2N100P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)
IXTA2N100P Applications
There are a lot of IXYS
IXTA2N100P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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