IXTA2N100P

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Mfr.Part #
IXTA2N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 2A TO263
Stock
292
In Stock :
292

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
29ns
Polarity/Channel Type :
N-Channel
FET Feature :
--
Drain to Source Breakdown Voltage :
1kV
Vgs(th) (Max) @ Id :
4.5V @ 100μA
FET Type :
N-Channel
Power Dissipation-Max :
86W Tc
Number of Terminations :
2
Terminal Form :
Gull wing
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
SMD/SMT
Power Dissipation (Max) :
86W (Tc)
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
24.3nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
150 mJ
Number of Channels :
1 Channel
Power Dissipation :
86W
Drain-source On Resistance-Max :
7.5 Ω
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 150 C
Pin Count :
4
Terminal Position :
Single
JESD-30 Code :
R-PSSO-G2
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
27 ns
Series :
Polar™
Product Type :
MOSFET
Surface Mount :
yes
Power Dissipation-Max (Abs) :
86 W
Rds On (Max) @ Id, Vgs :
7.5 Ω @ 500mA, 10V
Manufacturer :
IXYS
Terminal Finish :
Matte Tin (Sn)
Drain Current-Max (Abs) (ID) :
2A
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
1000V
Published :
2008
Product Status :
Active
Width :
9.65 mm
Turn-Off Delay Time :
80 ns
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
JESD-609 Code :
e3
Base Product Number :
IXTA2
Packaging :
Tube
Length :
10.41 mm
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
655pF @ 25V
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
TO-263 (IXTA)
Qualification Status :
Not Qualified
Brand :
IXYS
Lead Free :
Lead Free
Pulsed Drain Current-Max (IDM) :
5A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
JEDEC-95 Code :
TO-263AB
Product Category :
MOSFET
Number of Elements :
1
Continuous Drain Current (ID) :
2A
Pbfree Code :
yes
DS Breakdown Voltage-Min :
1000 V
Mounting Type :
Surface Mount
Height :
4.83 mm
Number of Terminals :
2
Reach Compliance Code :
not_compliant
Datasheets
IXTA2N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N100P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, IXTA2N100P pinout, IXTA2N100P datasheet PDF, IXTA2N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA2N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA2N100P


N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA2N100P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 655pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 5A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA2N100P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)


IXTA2N100P Applications


There are a lot of IXYS
IXTA2N100P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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