IXTA2N100P
- Mfr.Part #
- IXTA2N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 2A TO263
- Stock
- 292
- In Stock :
- 292
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 25V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Height :
- 4.83 mm
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 9.65 mm
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 1000V
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2008
- Series :
- Polar™
- Terminal Form :
- Gull wing
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 150 mJ
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 1kV
- Maximum Operating Temperature :
- + 150 C
- Rise Time :
- 29ns
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 24.3nC @ 10V
- Base Product Number :
- IXTA2
- Power Dissipation (Max) :
- 86W (Tc)
- DS Breakdown Voltage-Min :
- 1000 V
- Mounting Style :
- SMD/SMT
- Lead Free :
- Lead Free
- Pin Count :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Turn-Off Delay Time :
- 80 ns
- Drain Current-Max (Abs) (ID) :
- 2A
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max (Abs) :
- 86 W
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Brand :
- IXYS
- Number of Elements :
- 1
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 2A
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 5A
- Power Dissipation-Max :
- 86W Tc
- Manufacturer :
- IXYS
- JEDEC-95 Code :
- TO-263AB
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Drain-source On Resistance-Max :
- 7.5 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Supplier Device Package :
- TO-263 (IXTA)
- Number of Terminations :
- 2
- Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Product Status :
- Active
- Length :
- 10.41 mm
- FET Feature :
- --
- Power Dissipation :
- 86W
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 27 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXTA2N100P

N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA2N100P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 655pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 5A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA2N100P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)
IXTA2N100P Applications
There are a lot of IXYS
IXTA2N100P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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