IXTA2N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

1 N-Channel

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation (Max) :

100W (Tc)

Terminal Position :

Single

Mount :

Surface Mount

Power Dissipation :

100W

Transistor Application :

SWITCHING

Product Status :

Active

Drain Current-Max (Abs) (ID) :

2A

Number of Terminals :

2

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Brand :

IXYS

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

2A

Drain to Source Breakdown Voltage :

1kV

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Category :

MOSFET

Power Dissipation-Max :

100W Tc

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-263AB

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Subcategory :

MOSFETs

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Number of Terminations :

2

Supplier Device Package :

TO-263 (IXTA)

DS Breakdown Voltage-Min :

1000 V

Height :

4.83 mm

Minimum Operating Temperature :

- 55 C

Pulsed Drain Current-Max (IDM) :

8A

Polarity/Channel Type :

N-Channel

FET Feature :

--

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

150 mJ

Channel Mode :

Enhancement

Mounting Style :

SMD/SMT

Rise Time :

15ns

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

Number of Elements :

1

Package Shape :

RECTANGULAR

Configuration :

Single

Transistor Element Material :

SILICON

Pbfree Code :

yes

Turn-Off Delay Time :

60 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Fall Time (Typ) :

30 ns

Pin Count :

4

Drain to Source Voltage (Vdss) :

1000V

Number of Channels :

1 Channel

Number of Pins :

3

Drain-source On Resistance-Max :

7Ohm

Additional Feature :

AVALANCHE RATED

Length :

10.29 mm

Base Product Number :

IXTA2

Width :

9.65 mm

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Series :

--

Rds On (Max) @ Id, Vgs :

7 Ω @ 1A, 10V

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR