IXTA2N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

100W Tc

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Number of Terminals :

2

Current - Continuous Drain (Id) @ 25°C :

2A Tc

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Transistor Element Material :

SILICON

Power Dissipation :

100W

Pin Count :

4

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation (Max) :

100W (Tc)

Length :

10.29 mm

Continuous Drain Current (ID) :

2A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

7 Ω @ 1A, 10V

Subcategory :

MOSFETs

Fall Time (Typ) :

30 ns

Product Category :

MOSFET

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83 mm

Package :

Tube

Channel Mode :

Enhancement

Supplier Device Package :

TO-263 (IXTA)

Operating Mode :

ENHANCEMENT MODE

Configuration :

Single

Drain Current-Max (Abs) (ID) :

2A

Avalanche Energy Rating (Eas) :

150 mJ

Pbfree Code :

yes

Brand :

IXYS

JEDEC-95 Code :

TO-263AB

Gate to Source Voltage (Vgs) :

20V

Base Product Number :

IXTA2

FET Feature :

--

Mounting Style :

SMD/SMT

JESD-609 Code :

e3

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

1000V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Turn-Off Delay Time :

60 ns

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 25V

Rise Time :

15ns

Published :

2009

Terminal Position :

Single

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1 Channel

Series :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Width :

9.65 mm

Drain-source On Resistance-Max :

7Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

1kV

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

1000 V

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Product Status :

Active

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

8A

Mounting Type :

Surface Mount