IXTA28P065T

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Mfr.Part #
IXTA28P065T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 65V 28A TO263
Stock
1,018
In Stock :
1,018

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXTA28
Mount :
Surface Mount
Power Dissipation-Max (Abs) :
83 W
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Transistor Polarity :
P-Channel
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Drain Current-Max (Abs) (ID) :
28 A
Number of Terminations :
2
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Polarity/Channel Type :
P-Channel
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
28A Tc
Terminal Finish :
PURE TIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Published :
2010
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
SMD/SMT
Gate to Source Voltage (Vgs) :
15V
Power Dissipation :
83W
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Channels :
1 Channel
Pin Count :
4
Terminal Form :
Gull wing
JEDEC-95 Code :
TO-263AB
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Avalanche Energy Rating (Eas) :
200 mJ
Vgs(th) (Max) @ Id :
4.5V @ 250μA
FET Type :
P-Channel
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Drain-source On Resistance-Max :
0.045Ohm
Pulsed Drain Current-Max (IDM) :
90A
Transistor Type :
1 P-Channel
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
65V
Rds On (Max) @ Id, Vgs :
45m Ω @ 14A, 10V
Continuous Drain Current (ID) :
28A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Reach Compliance Code :
Unknown
Configuration :
Single
Series :
TrenchP™
JESD-609 Code :
e3
Power Dissipation (Max) :
83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
2030pF @ 25V
Vgs (Max) :
±15V
Manufacturer :
IXYS
FET Feature :
--
Qualification Status :
Not Qualified
Packaging :
Tube
Number of Terminals :
2
Surface Mount :
yes
Factory Lead Time :
28 Weeks
Pbfree Code :
yes
Package :
Tube
Power Dissipation-Max :
83W Tc
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
-65V
Supplier Device Package :
TO-263 (IXTA)
DS Breakdown Voltage-Min :
65 V
Product Type :
MOSFET
Datasheets
IXTA28P065T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA28P065T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Number of Pins:3, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXTA28P065T pinout, IXTA28P065T datasheet PDF, IXTA28P065T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA28P065T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA28P065T


P-Channel Tube 45m Ω @ 14A, 10V ±15V 2030pF @ 25V 46nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA28P065T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2030pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 28A.With a drain-source breakdown voltage of -65V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -65V.28 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 90A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 65 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 65V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTA28P065T Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of -65V voltage
based on its rated peak drain current 90A.
a 65V drain to source voltage (Vdss)


IXTA28P065T Applications


There are a lot of IXYS
IXTA28P065T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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