IXTA28P065T
- Mfr.Part #
- IXTA28P065T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 65V 28A TO263
- Stock
- 1,018
- In Stock :
- 1,018
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- PURE TIN
- Surface Mount :
- yes
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 28A
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Manufacturer :
- IXYS
- Product Status :
- Active
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 15V
- Published :
- 2010
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Maximum Operating Temperature :
- + 150 C
- Factory Lead Time :
- 28 Weeks
- JESD-30 Code :
- R-PSSO-G2
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 14A, 10V
- Mounting Style :
- SMD/SMT
- Vgs (Max) :
- ±15V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Base Product Number :
- IXTA28
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Package :
- Tube
- JEDEC-95 Code :
- TO-263AB
- DS Breakdown Voltage-Min :
- 65 V
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Power Dissipation (Max) :
- 83W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- -65V
- Power Dissipation :
- 83W
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2030pF @ 25V
- Pin Count :
- 4
- Power Dissipation-Max (Abs) :
- 83 W
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- P-Channel
- Brand :
- IXYS
- Transistor Polarity :
- P-Channel
- FET Type :
- P-Channel
- Element Configuration :
- Single
- Reach Compliance Code :
- Unknown
- Series :
- TrenchP™
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-263 (IXTA)
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 28 A
- Number of Terminals :
- 2
- Transistor Type :
- 1 P-Channel
- Product Type :
- MOSFET
- Power Dissipation-Max :
- 83W Tc
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.045Ohm
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Pulsed Drain Current-Max (IDM) :
- 90A
- Drain to Source Voltage (Vdss) :
- 65V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXTA28P065T

P-Channel Tube 45m Ω @ 14A, 10V ±15V 2030pF @ 25V 46nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA28P065T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2030pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 28A.With a drain-source breakdown voltage of -65V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -65V.28 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 90A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 65 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 65V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTA28P065T Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of -65V voltage
based on its rated peak drain current 90A.
a 65V drain to source voltage (Vdss)
IXTA28P065T Applications
There are a lot of IXYS
IXTA28P065T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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