IXTA28P065T
- Mfr.Part #
- IXTA28P065T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 65V 28A TO263
- Stock
- 1,018
- In Stock :
- 1,018
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Base Product Number :
- IXTA28
- Mount :
- Surface Mount
- Power Dissipation-Max (Abs) :
- 83 W
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- P-Channel
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 28 A
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- P-Channel
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Terminal Finish :
- PURE TIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- Published :
- 2010
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 15V
- Power Dissipation :
- 83W
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- JEDEC-95 Code :
- TO-263AB
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.045Ohm
- Pulsed Drain Current-Max (IDM) :
- 90A
- Transistor Type :
- 1 P-Channel
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 65V
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 14A, 10V
- Continuous Drain Current (ID) :
- 28A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Reach Compliance Code :
- Unknown
- Configuration :
- Single
- Series :
- TrenchP™
- JESD-609 Code :
- e3
- Power Dissipation (Max) :
- 83W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2030pF @ 25V
- Vgs (Max) :
- ±15V
- Manufacturer :
- IXYS
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Number of Terminals :
- 2
- Surface Mount :
- yes
- Factory Lead Time :
- 28 Weeks
- Pbfree Code :
- yes
- Package :
- Tube
- Power Dissipation-Max :
- 83W Tc
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- -65V
- Supplier Device Package :
- TO-263 (IXTA)
- DS Breakdown Voltage-Min :
- 65 V
- Product Type :
- MOSFET
- Datasheets
- IXTA28P065T

P-Channel Tube 45m Ω @ 14A, 10V ±15V 2030pF @ 25V 46nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA28P065T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2030pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 28A.With a drain-source breakdown voltage of -65V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -65V.28 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 90A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 65 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 65V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTA28P065T Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of -65V voltage
based on its rated peak drain current 90A.
a 65V drain to source voltage (Vdss)
IXTA28P065T Applications
There are a lot of IXYS
IXTA28P065T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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