IXTA26P20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

200V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Minimum Operating Temperature :

- 55 C

Package :

Tube

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

2740pF @ 25V

Packaging :

Tube

Published :

2007

Series :

PolarP™

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Qualification :

-

Transistor Type :

1 P-Channel

Supplier Device Package :

TO-263 (IXTA)

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

Pin Count :

4

Pbfree Code :

yes

Element Configuration :

Single

Height :

4.83 mm

Channel Mode :

Enhancement

Additional Feature :

AVALANCHE RATED

Power Dissipation :

300W

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

170m Ω @ 13A, 10V

Fall Time (Typ) :

21 ns

Transistor Application :

SWITCHING

FET Type :

P-Channel

Product Category :

MOSFET

Continuous Drain Current (ID) :

26A

Reach Compliance Code :

not_compliant

FET Feature :

--

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current Id :

26A

Factory Lead Time :

28 Weeks

Brand :

IXYS

Product Status :

Active

Base Product Number :

IXTA26

Configuration :

Single

Vgs (Max) :

±20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-200V

Rise Time :

33ns

Power Dissipation-Max :

300W Tc

Gate to Source Voltage (Vgs) :

20V

Channel Type :

P Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.41 mm

Width :

9.65 mm

Number of Channels :

1 Channel

Number of Terminations :

2

Mounting Style :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Turn-Off Delay Time :

46 ns

Transistor Polarity :

P-Channel

Product Type :

MOSFET

JESD-609 Code :

e3

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

70A

Power Dissipation (Max) :

300W (Tc)