IXTA26P20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.41 mm

Pbfree Code :

yes

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

P-Channel

Pulsed Drain Current-Max (IDM) :

70A

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Series :

PolarP™

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Height :

4.83 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Mount :

Surface Mount

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Continuous Drain Current (ID) :

26A

Channel Mode :

Enhancement

Terminal Form :

Gull wing

Power Dissipation (Max) :

300W (Tc)

Packaging :

Tube

Width :

9.65 mm

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

28 Weeks

Drain to Source Voltage (Vdss) :

200V

Fall Time (Typ) :

21 ns

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-263 (IXTA)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

300W Tc

Lead Free :

Lead Free

FET Feature :

--

Transistor Element Material :

SILICON

Mounting Style :

SMD/SMT

Continuous Drain Current Id :

26A

Product Category :

MOSFET

Vgs (Max) :

±20V

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

2740pF @ 25V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification :

-

Transistor Type :

1 P-Channel

Transistor Application :

SWITCHING

Number of Elements :

1

Number of Channels :

1 Channel

Base Product Number :

IXTA26

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Product Status :

Active

RoHS :

Details

Case Connection :

DRAIN

Product Type :

MOSFET

Channel Type :

P Channel

Rise Time :

33ns

Rds On (Max) @ Id, Vgs :

170m Ω @ 13A, 10V

FET Type :

P-Channel

Turn-Off Delay Time :

46 ns

Published :

2007

Drain to Source Breakdown Voltage :

-200V

Configuration :

Single

Element Configuration :

Single

Power Dissipation :

300W