IXTA220N04T2-7

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

6820pF @ 25V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

360W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Turn-Off Delay Time :

31 ns

Channel Mode :

Enhancement

Product Status :

Active

JESD-30 Code :

R-PSSO-G6

Supplier Device Package :

TO-263-7 (IXTA..7)

Minimum Operating Temperature :

- 55 C

Published :

2008

JEDEC-95 Code :

TO-263

Number of Terminals :

6

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Package :

Tube

Transistor Element Material :

SILICON

Pbfree Code :

yes

Power Dissipation-Max :

360W Tc

Pulsed Drain Current-Max (IDM) :

660A

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Type :

TrenchT2 Power MOSFET

Drain to Source Breakdown Voltage :

40V

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Rise Time :

21ns

DS Breakdown Voltage-Min :

40 V

Pin Count :

3

Continuous Drain Current (ID) :

220A

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

10.2 mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Brand :

IXYS

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

9.4 mm

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

600 mJ

Mounting Style :

SMD/SMT

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

360 W

Height :

4.7 mm

Current - Continuous Drain (Id) @ 25°C :

220A Tc

Package Shape :

RECTANGULAR

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 50A, 10V

Terminal Form :

Gull wing

Product Category :

MOSFET

Drain Current-Max (Abs) (ID) :

220 A

Mounting Type :

Surface Mount

Factory Lead Time :

24 Weeks

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Product Type :

MOSFET

Reach Compliance Code :

Unknown

Terminal Position :

Single

Series :

TrenchT2™

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Base Product Number :

IXTA220

Case Connection :

DRAIN

Power Dissipation :

360W

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 175 C

Terminal Finish :

PURE TIN

Drain-source On Resistance-Max :

0.0035Ohm

Tradename :

HiPerFET

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Fall Time (Typ) :

21 ns

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE