IXTA220N04T2-7

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

1 N-Channel

JESD-609 Code :

e3

Fall Time (Typ) :

21 ns

ECCN Code :

EAR99

Product Category :

MOSFET

Base Product Number :

IXTA220

Mounting Style :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

6820pF @ 25V

Published :

2008

Product Status :

Active

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pbfree Code :

yes

Supplier Device Package :

TO-263-7 (IXTA..7)

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminals :

6

Type :

TrenchT2 Power MOSFET

Maximum Operating Temperature :

+ 175 C

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

40 V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation (Max) :

360W (Tc)

Mount :

Surface Mount

FET Type :

N-Channel

Packaging :

Tube

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

JEDEC-95 Code :

TO-263

Drain-source On Resistance-Max :

0.0035Ohm

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Pulsed Drain Current-Max (IDM) :

660A

Length :

9.4 mm

FET Feature :

--

Terminal Finish :

PURE TIN

Rise Time :

21ns

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G6

Package :

Tube

Channel Mode :

Enhancement

Power Dissipation-Max (Abs) :

360 W

Terminal Form :

Gull wing

Number of Terminations :

6

Avalanche Energy Rating (Eas) :

600 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

360W

Current - Continuous Drain (Id) @ 25°C :

220A Tc

Factory Lead Time :

24 Weeks

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Manufacturer :

IXYS

Turn-Off Delay Time :

31 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

360W Tc

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Width :

10.2 mm

Drain Current-Max (Abs) (ID) :

220 A

Package Shape :

RECTANGULAR

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Drain to Source Breakdown Voltage :

40V

Series :

TrenchT2™

Product Type :

MOSFET

Case Connection :

DRAIN

Height :

4.7 mm

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 50A, 10V

Terminal Position :

Single

Continuous Drain Current (ID) :

220A

Tradename :

HiPerFET