IXTA200N085T
- Mfr.Part #
- IXTA200N085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 200A TO263
- Stock
- 9,133
- In Stock :
- 9,133
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Brand :
- IXYS
- Mounting Style :
- SMD/SMT
- Number of Elements :
- 1
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Power Dissipation-Max :
- 480W Tc
- Pin Count :
- 4
- Product Category :
- MOSFET
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 200A
- Supplier Device Package :
- TO-263 (IXTA)
- Mounting Type :
- Surface Mount
- Subcategory :
- MOSFETs
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Element Configuration :
- Single
- Package :
- Tube
- Base Product Number :
- IXTA200
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Rise Time :
- 80ns
- Manufacturer :
- IXYS
- JESD-609 Code :
- e3
- Height :
- 4.5 mm
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 480W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 175 C
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 85 V
- JEDEC-95 Code :
- TO-263AB
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 540A
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 64 ns
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Series :
- TrenchMV™
- Drain-source On Resistance-Max :
- 0.005ohm
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 85V
- Number of Channels :
- 1 Channel
- JESD-30 Code :
- R-PSSO-G2
- Turn-Off Delay Time :
- 65 ns
- Power Dissipation :
- 480W
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 25A, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 2
- ECCN Code :
- EAR99
- Width :
- 9.2 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 7600pF @ 25V
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Length :
- 9.9 mm
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 85V
- Number of Terminations :
- 2
- Product Status :
- Obsolete
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Datasheets
- IXTA200N085T

N-Channel Tube 5m Ω @ 25A, 10V ±20V 7600pF @ 25V 152nC @ 10V 85V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA200N085T Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7600pF @ 25V.This device has a continuous drain current (ID) of [200A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=85V, the drain-source breakdown voltage is 85V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 540A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 85 V.In order to operate this transistor, a voltage of 85V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA200N085T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 540A.
a 85V drain to source voltage (Vdss)
IXTA200N085T Applications
There are a lot of IXYS
IXTA200N085T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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