IXTA200N085T

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Mfr.Part #
IXTA200N085T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 85V 200A TO263
Stock
9,133
In Stock :
9,133

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Brand :
IXYS
Mounting Style :
SMD/SMT
Number of Elements :
1
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Power Dissipation-Max :
480W Tc
Pin Count :
4
Product Category :
MOSFET
FET Feature :
--
Continuous Drain Current (ID) :
200A
Supplier Device Package :
TO-263 (IXTA)
Mounting Type :
Surface Mount
Subcategory :
MOSFETs
RoHS Status :
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Element Configuration :
Single
Package :
Tube
Base Product Number :
IXTA200
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
Single
Rise Time :
80ns
Manufacturer :
IXYS
JESD-609 Code :
e3
Height :
4.5 mm
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Channel Mode :
Enhancement
Power Dissipation (Max) :
480W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 175 C
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
85 V
JEDEC-95 Code :
TO-263AB
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
540A
Operating Temperature :
-55°C~175°C TJ
Fall Time (Typ) :
64 ns
Lead Free :
Lead Free
Terminal Form :
Gull wing
Series :
TrenchMV™
Drain-source On Resistance-Max :
0.005ohm
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
85V
Number of Channels :
1 Channel
JESD-30 Code :
R-PSSO-G2
Turn-Off Delay Time :
65 ns
Power Dissipation :
480W
Minimum Operating Temperature :
- 55 C
Qualification Status :
Not Qualified
Published :
2006
Rds On (Max) @ Id, Vgs :
5m Ω @ 25A, 10V
Terminal Finish :
Matte Tin (Sn)
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
1000 mJ
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminals :
2
ECCN Code :
EAR99
Width :
9.2 mm
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 25V
Surface Mount :
yes
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Length :
9.9 mm
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
85V
Number of Terminations :
2
Product Status :
Obsolete
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Datasheets
IXTA200N085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA200N085T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Terminations:2, IXTA200N085T pinout, IXTA200N085T datasheet PDF, IXTA200N085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA200N085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA200N085T


N-Channel Tube 5m Ω @ 25A, 10V ±20V 7600pF @ 25V 152nC @ 10V 85V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA200N085T Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7600pF @ 25V.This device has a continuous drain current (ID) of [200A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=85V, the drain-source breakdown voltage is 85V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 540A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 85 V.In order to operate this transistor, a voltage of 85V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA200N085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 540A.
a 85V drain to source voltage (Vdss)


IXTA200N085T Applications


There are a lot of IXYS
IXTA200N085T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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