IXTA200N075T7

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Mfr.Part #
IXTA200N075T7
Manufacturer
Littelfuse
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Datasheet
Download
Description
MOSFET N-CH 75V 200A TO263-7
Stock
11,304
In Stock :
11,304

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-263
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Rise Time :
57ns
JESD-609 Code :
e3
Continuous Drain Current (ID) :
200A
Package :
Tube
RoHS Status :
RoHS Compliant
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Pulsed Drain Current-Max (IDM) :
540A
Number of Terminals :
6
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Terminal Position :
Single
Series :
TrenchMV™
Drain to Source Voltage (Vdss) :
75V
Packaging :
Tube
Base Product Number :
IXTA200
Rds On (Max) @ Id, Vgs :
5m Ω @ 25A, 10V
Pbfree Code :
yes
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Surface Mount :
yes
Package Shape :
RECTANGULAR
Number of Terminations :
6
Pin Count :
4
JESD-30 Code :
R-PSFM-G6
Turn-Off Delay Time :
54 ns
Drain to Source Breakdown Voltage :
75V
Power Dissipation-Max :
430W Tc
Avalanche Energy Rating (Eas) :
500 mJ
Transistor Application :
SWITCHING
Fall Time (Typ) :
52 ns
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.005ohm
Polarity/Channel Type :
N-Channel
Published :
2006
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Power Dissipation (Max) :
430W (Tc)
Case Connection :
DRAIN
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
DS Breakdown Voltage-Min :
75 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Supplier Device Package :
TO-263-7 (IXTA..7)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Surface Mount
Element Configuration :
Single
Mount :
Surface Mount
Power Dissipation :
430W
Product Status :
Obsolete
Terminal Finish :
Matte Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXTA200N075T7
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA200N075T7 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-7, D2Pak (6 Leads + Tab), TO-263CB, Operating Temperature:-55°C~175°C TJ, Number of Terminations:6, Mounting Type:Surface Mount, IXTA200N075T7 pinout, IXTA200N075T7 datasheet PDF, IXTA200N075T7 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA200N075T7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA200N075T7


N-Channel Tube 5m Ω @ 25A, 10V ±20V 6800pF @ 25V 160nC @ 10V 75V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTA200N075T7 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [54 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 540A.The DS breakdown voltage should be maintained above 75 V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTA200N075T7 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 540A.
a 75V drain to source voltage (Vdss)


IXTA200N075T7 Applications


There are a lot of IXYS
IXTA200N075T7 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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