IXTA200N075T

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Mfr.Part #
IXTA200N075T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 200A TO263
Stock
10,133
In Stock :
10,133

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
430W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
Gull wing
Qualification Status :
Not Qualified
Package :
Tube
Drain to Source Breakdown Voltage :
75V
Avalanche Energy Rating (Eas) :
750 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Base Product Number :
IXTA200
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-263AB
Package Shape :
RECTANGULAR
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
430W (Tc)
Product Status :
Obsolete
Pulsed Drain Current-Max (IDM) :
540A
Fall Time (Typ) :
52 ns
FET Feature :
--
Drain-source On Resistance-Max :
0.005ohm
DS Breakdown Voltage-Min :
75 V
JESD-609 Code :
e3
Number of Terminals :
2
Pbfree Code :
yes
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Case Connection :
DRAIN
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Type :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Surface Mount :
yes
Element Configuration :
Single
Published :
2006
Number of Elements :
1
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Turn-Off Delay Time :
54 ns
RoHS Status :
RoHS Compliant
Manufacturer :
IXYS Corporation
Rds On (Max) @ Id, Vgs :
5m Ω @ 25A, 10V
Number of Terminations :
2
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
Drain to Source Voltage (Vdss) :
75V
Supplier Device Package :
TO-263 (IXTA)
Vgs (Max) :
±20V
Terminal Finish :
Matte Tin (Sn)
Number of Pins :
3
ECCN Code :
EAR99
Power Dissipation :
430W
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4V @ 250µA
Series :
TrenchMV™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
57ns
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
200A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Mount :
Surface Mount
Datasheets
IXTA200N075T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA200N075T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Number of Pins:3, IXTA200N075T pinout, IXTA200N075T datasheet PDF, IXTA200N075T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA200N075T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA200N075T


N-Channel Tube 5m Ω @ 25A, 10V ±20V 6800pF @ 25V 160nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA200N075T Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [54 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 540A.The DS breakdown voltage should be maintained above 75 V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTA200N075T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 540A.
a 75V drain to source voltage (Vdss)


IXTA200N075T Applications


There are a lot of IXYS
IXTA200N075T applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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