IXTA200N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-263AB

Product Status :

Active

Power Dissipation-Max (Abs) :

360 W

Avalanche Energy Rating (Eas) :

600 mJ

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

200A Tc

Vgs (Max) :

±20V

Pbfree Code :

yes

Height :

4.83 mm

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 50A, 10V

Tradename :

HiPerFET

Case Connection :

DRAIN

Power Dissipation (Max) :

360W (Tc)

Turn-Off Delay Time :

49 ns

Power Dissipation :

360W

Published :

2008

Packaging :

Tube

Continuous Drain Current (ID) :

200A

Length :

9.65 mm

Pulsed Drain Current-Max (IDM) :

500A

Product Category :

MOSFET

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

200 A

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

109nC @ 10V

Number of Terminations :

2

Supplier Device Package :

TO-263 (IXTA)

Brand :

IXYS

Channel Mode :

Enhancement

Factory Lead Time :

28 Weeks

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Width :

10.41 mm

Rise Time :

22ns

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1 Channel

Configuration :

Single

Element Configuration :

Single

Series :

TrenchT2™

Drain-source On Resistance-Max :

0.0042Ohm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

55V

Power Dissipation-Max :

360W Tc

Type :

TrenchT2 Power MOSFET

Fall Time (Typ) :

27 ns

Package :

Tube

ECCN Code :

EAR99

Pin Count :

4

Minimum Operating Temperature :

- 55 C

Base Product Number :

IXTA200

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

2

DS Breakdown Voltage-Min :

55 V

Mounting Type :

Surface Mount

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

55V

Terminal Finish :

Matte Tin (Sn)

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Number of Elements :

1

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Maximum Operating Temperature :

+ 175 C

Transistor Type :

1 N-Channel

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Mounting Style :

SMD/SMT