IXTA1R6N50D2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

UL RECOGNIZED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

--

Pin Count :

3

Packaging :

Tube

Number of Terminations :

2

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

645pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

100W (Tc)

JEDEC-95 Code :

TO-263AA

Number of Elements :

1

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 800mA, 0V

Terminal Form :

Gull wing

Terminal Position :

Single

Factory Lead Time :

19 Weeks

Transistor Element Material :

SILICON

Base Product Number :

IXTA1

Manufacturer :

IXYS

Power Dissipation-Max :

100W Tc

RoHS :

Details

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Series :

--

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1 Channel

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Supplier Device Package :

TO-263 (IXTA)

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

1.6A

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

23.7nC @ 5V

Package :

Tube

Product Type :

MOSFET

Brand :

IXYS

Transistor Polarity :

N-Channel

Published :

2009

JESD-609 Code :

e3

FET Feature :

Depletion Mode

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Pbfree Code :

yes

Product Category :

MOSFET