IXTA1R4N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Brand :

IXYS

Fall Time (Typ) :

28 ns

RoHS :

Details

Number of Channels :

1 Channel

Packaging :

Tube

Series :

Polar™

DS Breakdown Voltage-Min :

1000 V

Drain to Source Breakdown Voltage :

1kV

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Factory Lead Time :

28 Weeks

Product Status :

Active

Turn-Off Delay Time :

65 ns

Package :

Tube

Rise Time :

35ns

Power Dissipation :

63W

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

17.8nC @ 10V

Vgs (Max) :

±20V

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Base Product Number :

IXTA1

Configuration :

Single

Drain Current-Max (Abs) (ID) :

1.4 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

11 Ω @ 500mA, 10V

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

63W (Tc)

JEDEC-95 Code :

TO-263AB

Power Dissipation-Max (Abs) :

63 W

Manufacturer :

IXYS

Terminal Form :

Gull wing

Supplier Device Package :

TO-263 (IXTA)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2011

Number of Terminations :

2

Number of Elements :

1

Product Type :

MOSFET

FET Feature :

--

Height :

4.83 mm

Maximum Operating Temperature :

+ 150 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Type :

1 N-Channel

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

100 mJ

Surface Mount :

yes

Transistor Application :

SWITCHING

Pin Count :

4

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Continuous Drain Current (ID) :

1.4A

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

3A

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

1000V

Mount :

Surface Mount

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Number of Terminals :

2

Length :

10.41 mm

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

11 Ω

Width :

9.65 mm

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

63W Tc

Pbfree Code :

yes