IXTA1R4N100P
- Mfr.Part #
- IXTA1R4N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1.4A TO263
- Stock
- 110
- In Stock :
- 110
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Height :
- 4.83 mm
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Transistor Polarity :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- yes
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 11 Ω @ 500mA, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 9.65 mm
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 1000 V
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Mode :
- Enhancement
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 17.8nC @ 10V
- Supplier Device Package :
- TO-263 (IXTA)
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 3A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain-source On Resistance-Max :
- 11 Ω
- Product Status :
- Active
- Mounting Style :
- SMD/SMT
- Case Connection :
- DRAIN
- Product Category :
- MOSFET
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max :
- 63W Tc
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Fall Time (Typ) :
- 28 ns
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 1000V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- Polar™
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 63W (Tc)
- Continuous Drain Current (ID) :
- 1.4A
- Base Product Number :
- IXTA1
- Drain Current-Max (Abs) (ID) :
- 1.4 A
- Power Dissipation-Max (Abs) :
- 63 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSSO-G2
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 1kV
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS :
- Details
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Factory Lead Time :
- 28 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Tc
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 2
- Power Dissipation :
- 63W
- Pin Count :
- 4
- Turn-Off Delay Time :
- 65 ns
- Rise Time :
- 35ns
- Length :
- 10.41 mm
- JEDEC-95 Code :
- TO-263AB
- Published :
- 2011
- Terminal Position :
- Single
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- IXTA1R4N100P

N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA1R4N100P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 450pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.4A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.1.4 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Peak drain current for this device is 3A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTA1R4N100P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTA1R4N100P Applications
There are a lot of IXYS
IXTA1R4N100P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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