IXTA1R4N100P

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Mfr.Part #
IXTA1R4N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 1.4A TO263
Stock
110
In Stock :
110

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
FET Type :
N-Channel
Height :
4.83 mm
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
450pF @ 25V
Transistor Polarity :
N-Channel
Maximum Operating Temperature :
+ 150 C
Surface Mount :
yes
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
11 Ω @ 500mA, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Width :
9.65 mm
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
1000 V
Gate to Source Voltage (Vgs) :
20V
Channel Mode :
Enhancement
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
17.8nC @ 10V
Supplier Device Package :
TO-263 (IXTA)
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
3A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-source On Resistance-Max :
11 Ω
Product Status :
Active
Mounting Style :
SMD/SMT
Case Connection :
DRAIN
Product Category :
MOSFET
Number of Terminations :
2
Mount :
Surface Mount
Transistor Type :
1 N-Channel
Power Dissipation-Max :
63W Tc
Product Type :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Number of Elements :
1
Fall Time (Typ) :
28 ns
FET Feature :
--
Drain to Source Voltage (Vdss) :
1000V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
Polar™
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Element Configuration :
Single
Package :
Tube
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
63W (Tc)
Continuous Drain Current (ID) :
1.4A
Base Product Number :
IXTA1
Drain Current-Max (Abs) (ID) :
1.4 A
Power Dissipation-Max (Abs) :
63 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PSSO-G2
Qualification Status :
Not Qualified
Configuration :
Single
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
1kV
Package Shape :
RECTANGULAR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS :
Details
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Avalanche Energy Rating (Eas) :
100 mJ
Factory Lead Time :
28 Weeks
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Minimum Operating Temperature :
- 55 C
Number of Terminals :
2
Power Dissipation :
63W
Pin Count :
4
Turn-Off Delay Time :
65 ns
Rise Time :
35ns
Length :
10.41 mm
JEDEC-95 Code :
TO-263AB
Published :
2011
Terminal Position :
Single
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Datasheets
IXTA1R4N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA1R4N100P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Channels:1 Channel, IXTA1R4N100P pinout, IXTA1R4N100P datasheet PDF, IXTA1R4N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA1R4N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA1R4N100P


N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA1R4N100P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 450pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.4A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.1.4 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Peak drain current for this device is 3A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTA1R4N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTA1R4N100P Applications


There are a lot of IXYS
IXTA1R4N100P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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