IXTA1N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Continuous Drain Current (ID) :

750mA

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

11 Ω

Current - Continuous Drain (Id) @ 25°C :

750mA Tc

Drain to Source Voltage (Vdss) :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

19ns

Power Dissipation-Max :

40W Tc

JESD-609 Code :

e3

Number of Elements :

1

Qualification Status :

Not Qualified

Number of Terminals :

2

Terminal Finish :

Matte Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

TO-263 (IXTA)

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Reach Compliance Code :

Compliant

RoHS :

Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Power Dissipation (Max) :

40W (Tc)

ECCN Code :

EAR99

Number of Pins :

3

JEDEC-95 Code :

TO-263AB

Manufacturer :

IXYS Corporation

Avalanche Energy Rating (Eas) :

100 mJ

Power Dissipation :

40W

Drain to Source Resistance :

11 Ω

Input Capacitance :

220 pF

Max Power Dissipation :

40 W

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V

Drain Current-Max (Abs) (ID) :

0.75A

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

800V

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

11 Ω @ 500mA, 10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Base Product Number :

IXTA1

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

3A

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2003

Terminal Position :

Single

Element Configuration :

Single

Package :

Tube

Package Shape :

RECTANGULAR

Mount :

Surface Mount

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Series :

--

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55 °C

Product Status :

Active

Turn-Off Delay Time :

40 ns

DS Breakdown Voltage-Min :

800 V

Transistor Element Material :

SILICON

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

28 ns

Max Operating Temperature :

150 °C

Rds On Max :

11 Ω

Operating Mode :

ENHANCEMENT MODE