IXTA1N200P3HV
- Mfr.Part #
- IXTA1N200P3HV
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 2000V 1A TO263
- Stock
- 42,464
- In Stock :
- 42,464
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1 Channel
- Mount :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Brand :
- IXYS
- JESD-609 Code :
- e3
- Base Product Number :
- IXTA1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Product Category :
- MOSFET
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Published :
- 2014
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 1A
- Gate Charge (Qg) (Max) @ Vgs :
- 23.5nC @ 10V
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 24 Weeks
- Subcategory :
- MOSFETs
- Power Dissipation-Max :
- 125W Tc
- Mounting Style :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Power Dissipation (Max) :
- 125W (Tc)
- Supplier Device Package :
- TO-263 (IXTA)
- Rds On (Max) @ Id, Vgs :
- 40 Ω @ 500mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 646pF @ 25V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Series :
- --
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 26 ns
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 2000V
- Manufacturer :
- IXYS
- Datasheets
- IXTA1N200P3HV

N-Channel Tube 40 Ω @ 500mA, 10V ±20V 646pF @ 25V 23.5nC @ 10V 2000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA1N200P3HV Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 646pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1A. Operating this transistor requires a 2000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA1N200P3HV Features
a continuous drain current (ID) of 1A
a 2000V drain to source voltage (Vdss)
IXTA1N200P3HV Applications
There are a lot of IXYS
IXTA1N200P3HV applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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