IXTA1N100P

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Mfr.Part #
IXTA1N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 1A TO263
Stock
21,989
In Stock :
21,989

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Vgs (Max) :
±20V
Pbfree Code :
yes
Channel Mode :
Enhancement
JESD-609 Code :
e3
Reach Compliance Code :
not_compliant
Mounting Style :
SMD/SMT
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
331pF @ 25V
JEDEC-95 Code :
TO-263AB
Number of Channels :
1 Channel
Drain to Source Breakdown Voltage :
1kV
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Length :
10.41 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current (ID) :
1A
Additional Feature :
AVALANCHE RATED
Brand :
IXYS
Transistor Polarity :
N-Channel
Published :
2008
Height :
4.83 mm
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Pin Count :
4
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
15 Ω @ 500mA, 10V
Series :
Polar™
Qualification Status :
Not Qualified
RoHS :
Details
Number of Terminals :
2
Transistor Type :
1 N-Channel
Configuration :
Single
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Drain Current-Max (Abs) (ID) :
1A
Power Dissipation (Max) :
50W (Tc)
Power Dissipation :
50W
Avalanche Energy Rating (Eas) :
100 mJ
Width :
9.65 mm
Power Dissipation-Max :
50W Tc
Rise Time :
26ns
Turn-Off Delay Time :
55 ns
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
1000V
Drain-source On Resistance-Max :
15 Ω
Number of Elements :
1
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Product Type :
MOSFET
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Fall Time (Typ) :
24 ns
Package :
Tube
Pulsed Drain Current-Max (IDM) :
1.8A
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 150 C
JESD-30 Code :
R-PSSO-G2
Terminal Position :
Single
Mounting Type :
Surface Mount
Packaging :
Tube
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-263 (IXTA)
Factory Lead Time :
17 Weeks
Gate to Source Voltage (Vgs) :
20V
DS Breakdown Voltage-Min :
1000 V
Terminal Form :
Gull wing
Power Dissipation-Max (Abs) :
50 W
ECCN Code :
EAR99
Base Product Number :
IXTA1
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Datasheets
IXTA1N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA1N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IXTA1N100P pinout, IXTA1N100P datasheet PDF, IXTA1N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA1N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA1N100P


N-Channel Tube 15 Ω @ 500mA, 10V ±20V 331pF @ 25V 15.5nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA1N100P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 100 mJ.A device's maximal input capacitance is 331pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1.8A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA1N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTA1N100P Applications


There are a lot of IXYS
IXTA1N100P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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