IXTA1N100P
- Mfr.Part #
- IXTA1N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1A TO263
- Stock
- 21,989
- In Stock :
- 21,989
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Channel Mode :
- Enhancement
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Mounting Style :
- SMD/SMT
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 331pF @ 25V
- JEDEC-95 Code :
- TO-263AB
- Number of Channels :
- 1 Channel
- Drain to Source Breakdown Voltage :
- 1kV
- RoHS Status :
- ROHS3 Compliant
- Manufacturer :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Length :
- 10.41 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 1A
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Published :
- 2008
- Height :
- 4.83 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 15.5nC @ 10V
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 15 Ω @ 500mA, 10V
- Series :
- Polar™
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Number of Terminals :
- 2
- Transistor Type :
- 1 N-Channel
- Configuration :
- Single
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 1A
- Power Dissipation (Max) :
- 50W (Tc)
- Power Dissipation :
- 50W
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Width :
- 9.65 mm
- Power Dissipation-Max :
- 50W Tc
- Rise Time :
- 26ns
- Turn-Off Delay Time :
- 55 ns
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 1000V
- Drain-source On Resistance-Max :
- 15 Ω
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Product Type :
- MOSFET
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 24 ns
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 150 C
- JESD-30 Code :
- R-PSSO-G2
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-263 (IXTA)
- Factory Lead Time :
- 17 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 1000 V
- Terminal Form :
- Gull wing
- Power Dissipation-Max (Abs) :
- 50 W
- ECCN Code :
- EAR99
- Base Product Number :
- IXTA1
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXTA1N100P

N-Channel Tube 15 Ω @ 500mA, 10V ±20V 331pF @ 25V 15.5nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA1N100P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 100 mJ.A device's maximal input capacitance is 331pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1.8A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA1N100P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)
IXTA1N100P Applications
There are a lot of IXYS
IXTA1N100P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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