IXTA1N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-263 (IXTA)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

50W Tc

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Product Category :

MOSFET

Factory Lead Time :

17 Weeks

Power Dissipation :

50W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

100 mJ

Package Shape :

RECTANGULAR

Rise Time :

26ns

Pin Count :

4

Height :

4.83 mm

JESD-609 Code :

e3

Brand :

IXYS

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

1000V

Drain to Source Breakdown Voltage :

1kV

Packaging :

Tube

Pbfree Code :

yes

Width :

9.65 mm

Continuous Drain Current (ID) :

1A

DS Breakdown Voltage-Min :

1000 V

Fall Time (Typ) :

24 ns

Pulsed Drain Current-Max (IDM) :

1.8A

Case Connection :

DRAIN

Product Status :

Active

Length :

10.41 mm

Transistor Application :

SWITCHING

Element Configuration :

Single

Maximum Operating Temperature :

+ 150 C

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Product Type :

MOSFET

Turn-Off Delay Time :

55 ns

Additional Feature :

AVALANCHE RATED

Mounting Style :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Published :

2008

Power Dissipation-Max (Abs) :

50 W

RoHS :

Details

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

15 Ω @ 500mA, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Polarity :

N-Channel

Number of Terminals :

2

Configuration :

Single

Drain-source On Resistance-Max :

15 Ω

Input Capacitance (Ciss) (Max) @ Vds :

331pF @ 25V

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Series :

Polar™

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Terminal Position :

Single

Base Product Number :

IXTA1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Power Dissipation (Max) :

50W (Tc)

Drain Current-Max (Abs) (ID) :

1A

Number of Channels :

1 Channel

JEDEC-95 Code :

TO-263AB

FET Feature :

--

Package :

Tube