IXTA1N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Base Product Number :

IXTA1

Surface Mount :

yes

Pin Count :

4

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

1.5 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Published :

2004

Turn-Off Delay Time :

20 ns

Power Dissipation (Max) :

54W (Tc)

JEDEC-95 Code :

TO-263AA

Drain to Source Breakdown Voltage :

1kV

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Supplier Device Package :

TO-263 (IXTA)

Case Connection :

DRAIN

Power Dissipation :

54W

Power Dissipation-Max :

54W Tc

Packaging :

Tube

Number of Channels :

1 Channel

Product Status :

Active

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

19ns

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

54 W

Terminal Form :

Gull wing

Mounting Style :

SMD/SMT

FET Type :

N-Channel

Continuous Drain Current (ID) :

1.5A

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

6A

Fall Time (Typ) :

18 ns

Resistance :

11Ohm

Number of Elements :

1

Drain to Source Voltage (Vdss) :

1000V

Avalanche Energy Rating (Eas) :

200 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Element Configuration :

Single

Series :

--

Manufacturer :

IXYS Corporation

Lead Free :

Lead Free

Maximum Operating Temperature :

+ 150 C

Factory Lead Time :

28 Weeks

FET Feature :

--

DS Breakdown Voltage-Min :

1000 V

Number of Terminations :

2

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Rds On (Max) @ Id, Vgs :

11 Ω @ 1A, 10V

Number of Terminals :

2

Package :

Tube

Mounting Type :

Surface Mount

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

11 Ω