IXTA1N100
- Mfr.Part #
- IXTA1N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1.5A TO263
- Stock
- 22,575
- In Stock :
- 22,575
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 11 Ω
- JESD-30 Code :
- R-PSSO-G2
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 54 W
- JESD-609 Code :
- e3
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-263AA
- Pulsed Drain Current-Max (IDM) :
- 6A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 1000V
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 1000 V
- Factory Lead Time :
- 28 Weeks
- Number of Elements :
- 1
- Series :
- --
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 1kV
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-263 (IXTA)
- Gate Charge (Qg) (Max) @ Vgs :
- 14.5nC @ 10V
- Manufacturer :
- IXYS Corporation
- Number of Terminations :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 19ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Published :
- 2004
- Number of Terminals :
- 2
- Fall Time (Typ) :
- 18 ns
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 1.5A
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 1.5 A
- Vgs(th) (Max) @ Id :
- 4.5V @ 25μA
- Turn-Off Delay Time :
- 20 ns
- Power Dissipation (Max) :
- 54W (Tc)
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 11 Ω @ 1A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Tc
- Case Connection :
- DRAIN
- Terminal Finish :
- Matte Tin (Sn)
- Surface Mount :
- yes
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 54W Tc
- Package Shape :
- RECTANGULAR
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXTA1
- FET Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Terminal Position :
- Single
- Minimum Operating Temperature :
- - 55 C
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Power Dissipation :
- 54W
- Resistance :
- 11Ohm
- Datasheets
- IXTA1N100

N-Channel Tube 11 Ω @ 1A, 10V ±30V 400pF @ 25V 14.5nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA1N100 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 1.5 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 6A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTA1N100 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 6A.
a 1000V drain to source voltage (Vdss)
IXTA1N100 Applications
There are a lot of IXYS
IXTA1N100 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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