IXTA1N100

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Mfr.Part #
IXTA1N100
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 1.5A TO263
Stock
22,575
In Stock :
22,575

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
11 Ω
JESD-30 Code :
R-PSSO-G2
Package :
Tube
Power Dissipation-Max (Abs) :
54 W
JESD-609 Code :
e3
Mounting Style :
SMD/SMT
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-263AA
Pulsed Drain Current-Max (IDM) :
6A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
Drain to Source Voltage (Vdss) :
1000V
FET Feature :
--
DS Breakdown Voltage-Min :
1000 V
Factory Lead Time :
28 Weeks
Number of Elements :
1
Series :
--
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
1kV
Channel Mode :
Enhancement
Supplier Device Package :
TO-263 (IXTA)
Gate Charge (Qg) (Max) @ Vgs :
14.5nC @ 10V
Manufacturer :
IXYS Corporation
Number of Terminations :
2
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Single
Transistor Polarity :
N-Channel
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
19ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
200 mJ
Published :
2004
Number of Terminals :
2
Fall Time (Typ) :
18 ns
Packaging :
Tube
Continuous Drain Current (ID) :
1.5A
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
1.5 A
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Turn-Off Delay Time :
20 ns
Power Dissipation (Max) :
54W (Tc)
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Product Status :
Active
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Qualification Status :
Not Qualified
Reach Compliance Code :
not_compliant
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
11 Ω @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C :
1.5A Tc
Case Connection :
DRAIN
Terminal Finish :
Matte Tin (Sn)
Surface Mount :
yes
Mount :
Surface Mount
Power Dissipation-Max :
54W Tc
Package Shape :
RECTANGULAR
Vgs (Max) :
±30V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS Status :
ROHS3 Compliant
Pin Count :
4
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXTA1
FET Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Terminal Position :
Single
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 25V
Power Dissipation :
54W
Resistance :
11Ohm
Datasheets
IXTA1N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA1N100 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, IXTA1N100 pinout, IXTA1N100 datasheet PDF, IXTA1N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA1N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA1N100


N-Channel Tube 11 Ω @ 1A, 10V ±30V 400pF @ 25V 14.5nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA1N100 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 1.5 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 6A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTA1N100 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 6A.
a 1000V drain to source voltage (Vdss)


IXTA1N100 Applications


There are a lot of IXYS
IXTA1N100 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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