IXTA182N055T7

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Mfr.Part #
IXTA182N055T7
Manufacturer
Littelfuse
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Datasheet
Download
Description
MOSFET N-CH 55V 182A TO263-7
Stock
2,784
In Stock :
2,784

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
6
Transistor Element Material :
SILICON
Manufacturer :
IXYS Corporation
Avalanche Energy Rating (Eas) :
1000 mJ
Input Capacitance :
4.85 nF
Packaging :
Tube
Power Dissipation (Max) :
360W (Tc)
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
4850pF @ 25V
Additional Feature :
AVALANCHE RATED
Drain to Source Breakdown Voltage :
55V
Current - Continuous Drain (Id) @ 25°C :
182A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
182A
Rds On (Max) @ Id, Vgs :
5m Ω @ 25A, 10V
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Published :
2006
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
53 ns
Mounting Type :
Surface Mount
Fall Time (Typ) :
38 ns
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.005ohm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXTA182
Mount :
Surface Mount
Pin Count :
4
Min Operating Temperature :
-55 °C
ECCN Code :
EAR99
Number of Terminals :
6
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-G6
Transistor Application :
SWITCHING
Series :
TrenchMV™
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
FET Feature :
--
Vgs (Max) :
±20V
Power Dissipation-Max :
360W Tc
Product Status :
Obsolete
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
JEDEC-95 Code :
TO-263
Max Power Dissipation :
360 W
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Supplier Device Package :
TO-263-7 (IXTA..7)
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
55V
Max Operating Temperature :
175 °C
Terminal Form :
Gull wing
Rise Time :
35ns
Terminal Position :
Single
RoHS Status :
RoHS Compliant
Terminal Finish :
Matte Tin (Sn)
RoHS :
Compliant
Qualification Status :
Not Qualified
Drain to Source Resistance :
5 mΩ
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~175°C TJ
Power Dissipation :
360W
Pulsed Drain Current-Max (IDM) :
490A
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Rds On Max :
5 mΩ
Package :
Tube
DS Breakdown Voltage-Min :
55 V
Case Connection :
DRAIN
Datasheets
IXTA182N055T7
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA182N055T7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Mounting Type:Surface Mount, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), TO-263CB, Operating Temperature:-55°C~175°C TJ, IXTA182N055T7 pinout, IXTA182N055T7 datasheet PDF, IXTA182N055T7 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA182N055T7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA182N055T7


N-Channel Tube 5m Ω @ 25A, 10V ±20V 4850pF @ 25V 114nC @ 10V 55V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTA182N055T7 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 4850pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 182A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 53 ns.Its maximum pulsed drain current is 490A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 5 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.For normal operation, maintain the DS breakdown voltage above 55 V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTA182N055T7 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 182A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 490A.
single MOSFETs transistor is 5 mΩ
a 55V drain to source voltage (Vdss)


IXTA182N055T7 Applications


There are a lot of IXYS
IXTA182N055T7 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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