IXTA180N10T7

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

42 ns

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Number of Terminals :

6

Tradename :

HiPerFET

ECCN Code :

EAR99

Power Dissipation :

480W

Number of Terminations :

6

Avalanche Energy Rating (Eas) :

750 mJ

Package Shape :

RECTANGULAR

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rise Time :

54ns

Case Connection :

DRAIN

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Product Category :

MOSFET

Mounting Style :

SMD/SMT

Lead Free :

Lead Free

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

TrenchMV™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

MOSFET

JESD-609 Code :

e3

Maximum Operating Temperature :

+ 175 C

Subcategory :

MOSFETs

Supplier Device Package :

TO-263-7 (IXTA..7)

Continuous Drain Current (ID) :

180A

Fall Time (Typ) :

31 ns

Product Status :

Active

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.0064 Ω

Width :

9.4 mm

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-263

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1 Channel

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

450A

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

100 V

Packaging :

Tube

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

100V

Pin Count :

4

Published :

2006

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Unknown

Height :

4.7 mm

Terminal Finish :

PURE TIN

FET Type :

N-Channel

Transistor Application :

SWITCHING

Power Dissipation-Max :

480W Tc

JESD-30 Code :

R-PSFM-G6

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Package :

Tube

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 25V

Length :

10.2 mm

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Resistance :

6.4mOhm

Base Product Number :

IXTA180

Power Dissipation (Max) :

480W (Tc)

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Channel Mode :

Enhancement

Additional Feature :

AVALANCHE RATED

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V