IXTA180N10T
- Mfr.Part #
- IXTA180N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO263
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tube
- Reach Compliance Code :
- not_compliant
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Resistance :
- 6.4mOhm
- Terminal Form :
- Gull wing
- Base Product Number :
- IXTA180
- Lead Free :
- Lead Free
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 28 Weeks
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Height :
- 4.5 mm
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 31 ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- SMD/SMT
- Power Dissipation (Max) :
- 480W (Tc)
- Continuous Drain Current (ID) :
- 180A
- Pin Count :
- 4
- FET Feature :
- --
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 151nC @ 10V
- Power Dissipation-Max :
- 480W Tc
- Terminal Finish :
- Matte Tin (Sn)
- Product Category :
- MOSFET
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 450A
- Rds On (Max) @ Id, Vgs :
- 6.4m Ω @ 25A, 10V
- Case Connection :
- DRAIN
- Transistor Type :
- 1 N-Channel
- Number of Terminations :
- 2
- Rise Time :
- 54ns
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Drain to Source Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Power Dissipation :
- 480W
- Tradename :
- HiPerFET
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- TrenchMV™
- Drain to Source Voltage (Vdss) :
- 100V
- Turn-Off Delay Time :
- 42 ns
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- Mount :
- Surface Mount
- Supplier Device Package :
- TO-263 (IXTA)
- Brand :
- IXYS
- Published :
- 2008
- Length :
- 9.9 mm
- Manufacturer :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 175 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Channel Mode :
- Enhancement
- Product Status :
- Active
- Width :
- 9.2 mm
- Datasheets
- IXTA180N10T

N-Channel Tube 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA180N10T Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 450A.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA180N10T Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 450A.
a 100V drain to source voltage (Vdss)
IXTA180N10T Applications
There are a lot of IXYS
IXTA180N10T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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