IXTA180N10T
- Mfr.Part #
- IXTA180N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO263
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 151nC @ 10V
- Power Dissipation (Max) :
- 480W (Tc)
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 180A
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Resistance :
- 6.4mOhm
- Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Tradename :
- HiPerFET
- Number of Terminations :
- 2
- Width :
- 9.2 mm
- Pulsed Drain Current-Max (IDM) :
- 450A
- Power Dissipation :
- 480W
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- SMD/SMT
- Series :
- TrenchMV™
- Fall Time (Typ) :
- 31 ns
- Base Product Number :
- IXTA180
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Vgs (Max) :
- ±30V
- Length :
- 9.9 mm
- Factory Lead Time :
- 28 Weeks
- Height :
- 4.5 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 480W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Product Category :
- MOSFET
- Turn-Off Delay Time :
- 42 ns
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-263 (IXTA)
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Reach Compliance Code :
- not_compliant
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Maximum Operating Temperature :
- + 175 C
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 6.4m Ω @ 25A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Published :
- 2008
- ECCN Code :
- EAR99
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pin Count :
- 4
- Drain to Source Breakdown Voltage :
- 100V
- FET Type :
- N-Channel
- Rise Time :
- 54ns
- Package :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Datasheets
- IXTA180N10T

N-Channel Tube 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA180N10T Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 450A.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA180N10T Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 450A.
a 100V drain to source voltage (Vdss)
IXTA180N10T Applications
There are a lot of IXYS
IXTA180N10T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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