IXTA180N10T

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Mfr.Part #
IXTA180N10T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 180A TO263
Stock
50
In Stock :
50

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Packaging :
Tube
Reach Compliance Code :
not_compliant
Avalanche Energy Rating (Eas) :
750 mJ
Resistance :
6.4mOhm
Terminal Form :
Gull wing
Base Product Number :
IXTA180
Lead Free :
Lead Free
Transistor Polarity :
N-Channel
Factory Lead Time :
28 Weeks
Pbfree Code :
yes
Number of Channels :
1 Channel
Height :
4.5 mm
Operating Mode :
ENHANCEMENT MODE
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±30V
Element Configuration :
Single
ECCN Code :
EAR99
Fall Time (Typ) :
31 ns
RoHS Status :
ROHS3 Compliant
Mounting Style :
SMD/SMT
Power Dissipation (Max) :
480W (Tc)
Continuous Drain Current (ID) :
180A
Pin Count :
4
FET Feature :
--
Configuration :
Single
Additional Feature :
AVALANCHE RATED, ULTRA LOW RESISTANCE
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
151nC @ 10V
Power Dissipation-Max :
480W Tc
Terminal Finish :
Matte Tin (Sn)
Product Category :
MOSFET
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
450A
Rds On (Max) @ Id, Vgs :
6.4m Ω @ 25A, 10V
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
Number of Terminations :
2
Rise Time :
54ns
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Drain to Source Breakdown Voltage :
100V
Mounting Type :
Surface Mount
Product Type :
MOSFET
Number of Elements :
1
Qualification Status :
Not Qualified
Package :
Tube
Power Dissipation :
480W
Tradename :
HiPerFET
Operating Temperature :
-55°C~175°C TJ
Series :
TrenchMV™
Drain to Source Voltage (Vdss) :
100V
Turn-Off Delay Time :
42 ns
JESD-30 Code :
R-PSSO-G2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4.5V @ 250μA
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
6900pF @ 25V
Mount :
Surface Mount
Supplier Device Package :
TO-263 (IXTA)
Brand :
IXYS
Published :
2008
Length :
9.9 mm
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 175 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Channel Mode :
Enhancement
Product Status :
Active
Width :
9.2 mm
Datasheets
IXTA180N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA180N10T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, IXTA180N10T pinout, IXTA180N10T datasheet PDF, IXTA180N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA180N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA180N10T


N-Channel Tube 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA180N10T Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 450A.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA180N10T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 450A.
a 100V drain to source voltage (Vdss)


IXTA180N10T Applications


There are a lot of IXYS
IXTA180N10T applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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