IXTA180N085T

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Mfr.Part #
IXTA180N085T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 85V 180A TO263
Stock
25,148
In Stock :
25,148

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
430W
Continuous Drain Current (ID) :
180A
Package :
Tube
Avalanche Energy Rating (Eas) :
1000 mJ
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
85V
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Power Dissipation-Max :
430W Tc
Resistance :
5.5mOhm
Pin Count :
4
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
ECCN Code :
EAR99
Base Product Number :
IXTA180
Mounting Type :
Surface Mount
Number of Terminals :
2
Drain Current-Max (Abs) (ID) :
180 A
Power Dissipation (Max) :
430W (Tc)
Drain-source On Resistance-Max :
0.0055 Ω
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Product Status :
Obsolete
FET Type :
N-Channel
JESD-609 Code :
e3
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
480A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package Shape :
RECTANGULAR
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
85V
Fall Time (Typ) :
65 ns
Qualification Status :
Not Qualified
Published :
2006
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn-Off Delay Time :
55 ns
Surface Mount :
yes
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Additional Feature :
AVALANCHE RATED
Rise Time :
70ns
Series :
TrenchMV™
RoHS Status :
RoHS Compliant
Packaging :
Tube
Supplier Device Package :
TO-263 (IXTA)
Manufacturer :
IXYS Corporation
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 25A, 10V
Terminal Position :
Single
DS Breakdown Voltage-Min :
85 V
Element Configuration :
Single
Terminal Form :
Gull wing
FET Feature :
--
Number of Terminations :
2
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max (Abs) :
430 W
Operating Temperature :
-55°C~175°C TJ
JEDEC-95 Code :
TO-263AB
Datasheets
IXTA180N085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA180N085T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, IXTA180N085T pinout, IXTA180N085T datasheet PDF, IXTA180N085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA180N085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA180N085T


N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 7500pF @ 25V 170nC @ 10V 85V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA180N085T Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=85V. And this device has 85V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 180 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 85 V in order to maintain normal operation.Operating this transistor requires a 85V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA180N085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 480A.
a 85V drain to source voltage (Vdss)


IXTA180N085T Applications


There are a lot of IXYS
IXTA180N085T applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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