IXTA180N085T
- Mfr.Part #
- IXTA180N085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 180A TO263
- Stock
- 25,148
- In Stock :
- 25,148
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 430W
- Continuous Drain Current (ID) :
- 180A
- Package :
- Tube
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 85V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 430W Tc
- Resistance :
- 5.5mOhm
- Pin Count :
- 4
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Base Product Number :
- IXTA180
- Mounting Type :
- Surface Mount
- Number of Terminals :
- 2
- Drain Current-Max (Abs) (ID) :
- 180 A
- Power Dissipation (Max) :
- 430W (Tc)
- Drain-source On Resistance-Max :
- 0.0055 Ω
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Product Status :
- Obsolete
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 480A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 85V
- Fall Time (Typ) :
- 65 ns
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 55 ns
- Surface Mount :
- yes
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 70ns
- Series :
- TrenchMV™
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Supplier Device Package :
- TO-263 (IXTA)
- Manufacturer :
- IXYS Corporation
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 25A, 10V
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 85 V
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- FET Feature :
- --
- Number of Terminations :
- 2
- Terminal Finish :
- Matte Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max (Abs) :
- 430 W
- Operating Temperature :
- -55°C~175°C TJ
- JEDEC-95 Code :
- TO-263AB
- Datasheets
- IXTA180N085T

N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 7500pF @ 25V 170nC @ 10V 85V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA180N085T Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=85V. And this device has 85V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 180 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 85 V in order to maintain normal operation.Operating this transistor requires a 85V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA180N085T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 480A.
a 85V drain to source voltage (Vdss)
IXTA180N085T Applications
There are a lot of IXYS
IXTA180N085T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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