IXTA170N075T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchT2™

Rise Time :

11ns

Power Dissipation-Max :

360W Tc

Continuous Drain Current (ID) :

170A

Package :

Tube

Subcategory :

MOSFETs

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Drain to Source Breakdown Voltage :

75V

Configuration :

Single

Product Category :

MOSFET

FET Type :

N-Channel

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

Power Dissipation-Max (Abs) :

360 W

Tradename :

HiPerFET

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Lead Free :

Lead Free

Maximum Operating Temperature :

+ 175 C

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

5.4mOhm @ 50A, 10V

Pulsed Drain Current-Max (IDM) :

510 A

Polarity/Channel Type :

N-Channel

Surface Mount :

yes

Mounting Style :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0054 Ω

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

109nC @ 10V

Case Connection :

DRAIN

Channel Mode :

Enhancement

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Height :

4.83 mm

Base Product Number :

IXTA170

Published :

2008

Width :

9.65 mm

Fall Time (Typ) :

19 ns

Turn-Off Delay Time :

25 ns

Max Operating Temperature :

175°C

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Power Dissipation (Max) :

360W (Tc)

Operating Temperature :

-55°C~175°C TJ

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

600 mJ

Mounting Type :

Surface Mount

Terminal Position :

Single

DS Breakdown Voltage-Min :

75 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 25V

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-263AB

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Length :

10.41 mm

FET Feature :

--

JESD-609 Code :

e3

Number of Terminals :

2

Input Capacitance :

6.86nF

Packaging :

Tube

Product Status :

Active

Rds On Max :

5.4 mΩ

Drain to Source Voltage (Vdss) :

75V

Pin Count :

4

Terminal Form :

Gull wing

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

170 A

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Power Dissipation :

360W

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

28 Weeks

Additional Feature :

AVALANCHE RATED

Drain to Source Resistance :

5.4mOhm

Brand :

IXYS

Product Type :

MOSFET

Supplier Device Package :

TO-263 (IXTA)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)