IXTA16N50P

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Mfr.Part #
IXTA16N50P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO263
Stock
1,722
In Stock :
1,722

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current Rating :
16A
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Number of Channels :
1 Channel
FET Type :
N-Channel
Power Dissipation-Max :
300W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
DS Breakdown Voltage-Min :
500 V
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
35 A
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Minimum Operating Temperature :
- 55 C
Base Product Number :
IXTA16
Transistor Application :
SWITCHING
Product Status :
Active
Terminal Finish :
Matte Tin (Sn)
Number of Terminals :
2
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
300 W
Rise Time :
28ns
Avalanche Energy Rating (Eas) :
750 mJ
Brand :
IXYS
Drain-source On Resistance-Max :
0.4Ohm
Pin Count :
4
Maximum Operating Temperature :
+ 150 C
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
JEDEC-95 Code :
TO-263AB
Width :
9.65 mm
Surface Mount :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
16 A
Fall Time (Typ) :
25 ns
Length :
10.41 mm
Voltage - Rated DC :
500V
Package :
Tube
Drain to Source Breakdown Voltage :
500V
Transistor Type :
1 N-Channel
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
500V
Turn-Off Delay Time :
70 ns
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Terminal Form :
Gull wing
RoHS :
Details
Number of Pins :
3
Supplier Device Package :
TO-263 (IXTA)
Number of Terminations :
2
Operating Temperature :
-55°C~150°C TJ
Configuration :
Single
Radiation Hardening :
No
Manufacturer :
IXYS
Factory Lead Time :
28 Weeks
Package Shape :
RECTANGULAR
Element Configuration :
Single
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
400m Ω @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Continuous Drain Current (ID) :
16A
Terminal Position :
Single
Packaging :
Tube
Product Type :
MOSFET
Power Dissipation :
300W
Published :
2006
Mounting Style :
SMD/SMT
Pbfree Code :
yes
Power Dissipation (Max) :
300W (Tc)
Additional Feature :
AVALANCHE RATED
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Reach Compliance Code :
not_compliant
Lead Free :
Lead Free
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
4.83 mm
Transistor Polarity :
N-Channel
Series :
PolarHV™
Product Category :
MOSFET
Gate to Source Voltage (Vgs) :
30V
Datasheets
IXTA16N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA16N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, IXTA16N50P pinout, IXTA16N50P datasheet PDF, IXTA16N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA16N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA16N50P


N-Channel Tube 400m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA16N50P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 16 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 35 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTA16N50P Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)


IXTA16N50P Applications


There are a lot of IXYS
IXTA16N50P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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