IXTA16N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

Supplier Device Package :

TO-263 (IXTA)

Rise Time :

28ns

Channel Mode :

Enhancement

Number of Terminations :

2

Mount :

Surface Mount

Power Dissipation (Max) :

300W (Tc)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXTA16

Element Configuration :

Single

Transistor Type :

1 N-Channel

Voltage - Rated DC :

500V

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

500V

Configuration :

Single

Turn-Off Delay Time :

70 ns

Package Shape :

RECTANGULAR

Length :

10.41 mm

Case Connection :

DRAIN

FET Feature :

--

RoHS :

Details

JEDEC-95 Code :

TO-263AB

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Package :

Tube

Number of Elements :

1

Product Status :

Active

Drain to Source Breakdown Voltage :

500V

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Brand :

IXYS

Transistor Application :

SWITCHING

Product Type :

MOSFET

Factory Lead Time :

28 Weeks

Pin Count :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS

Width :

9.65 mm

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Continuous Drain Current (ID) :

16A

Current Rating :

16A

Drain-source On Resistance-Max :

0.4Ohm

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Rds On (Max) @ Id, Vgs :

400m Ω @ 8A, 10V

Number of Terminals :

2

DS Breakdown Voltage-Min :

500 V

Published :

2006

Drain Current-Max (Abs) (ID) :

16 A

FET Type :

N-Channel

Power Dissipation :

300W

Pulsed Drain Current-Max (IDM) :

35 A

Number of Pins :

3

Fall Time (Typ) :

25 ns

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

750 mJ

Number of Channels :

1 Channel

Reach Compliance Code :

not_compliant

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Height :

4.83 mm

Transistor Polarity :

N-Channel

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

300 W

Terminal Finish :

Matte Tin (Sn)

Product Category :

MOSFET

Series :

PolarHV™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON