IXTA16N50P
- Mfr.Part #
- IXTA16N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO263
- Stock
- 1,722
- In Stock :
- 1,722
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating :
- 16A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- DS Breakdown Voltage-Min :
- 500 V
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXTA16
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminals :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 300 W
- Rise Time :
- 28ns
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Brand :
- IXYS
- Drain-source On Resistance-Max :
- 0.4Ohm
- Pin Count :
- 4
- Maximum Operating Temperature :
- + 150 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- JEDEC-95 Code :
- TO-263AB
- Width :
- 9.65 mm
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 16 A
- Fall Time (Typ) :
- 25 ns
- Length :
- 10.41 mm
- Voltage - Rated DC :
- 500V
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Type :
- 1 N-Channel
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 500V
- Turn-Off Delay Time :
- 70 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Terminal Form :
- Gull wing
- RoHS :
- Details
- Number of Pins :
- 3
- Supplier Device Package :
- TO-263 (IXTA)
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Radiation Hardening :
- No
- Manufacturer :
- IXYS
- Factory Lead Time :
- 28 Weeks
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 8A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Continuous Drain Current (ID) :
- 16A
- Terminal Position :
- Single
- Packaging :
- Tube
- Product Type :
- MOSFET
- Power Dissipation :
- 300W
- Published :
- 2006
- Mounting Style :
- SMD/SMT
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 300W (Tc)
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 4.83 mm
- Transistor Polarity :
- N-Channel
- Series :
- PolarHV™
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- IXTA16N50P

N-Channel Tube 400m Ω @ 8A, 10V ±30V 2250pF @ 25V 43nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA16N50P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 16 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 35 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTA16N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)
IXTA16N50P Applications
There are a lot of IXYS
IXTA16N50P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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