IXTA160N10T7
- Mfr.Part #
- IXTA160N10T7
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 160A TO263-7
- Stock
- 45,494
- In Stock :
- 45,494
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Channel Mode :
- Enhancement
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.2 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Series :
- TrenchMV™
- Rise Time :
- 61ns
- Transistor Application :
- SWITCHING
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 100V
- JESD-30 Code :
- R-PSFM-G6
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- RoHS :
- Compliant
- Supplier Device Package :
- TO-263-7 (IXTA..7)
- Max Operating Temperature :
- 175 °C
- Min Operating Temperature :
- -55 °C
- Number of Channels :
- 1 Channel
- Subcategory :
- MOSFETs
- Rds On Max :
- 7 mΩ
- Transistor Type :
- 1 N-Channel
- Height :
- 4.7 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 132nC @ 10V
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 0.007Ohm
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 160A
- Power Dissipation-Max :
- 430W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance :
- 6.6 nF
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Width :
- 9.4 mm
- Packaging :
- Tube
- Drain to Source Resistance :
- 7 mΩ
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Power Dissipation (Max) :
- 430W (Tc)
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Power Dissipation :
- 430W
- Number of Terminations :
- 6
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Turn-Off Delay Time :
- 49 ns
- Tradename :
- HiPerFET
- Pulsed Drain Current-Max (IDM) :
- 430A
- Maximum Operating Temperature :
- + 175 C
- Brand :
- IXYS
- Mounting Style :
- SMD/SMT
- Product Status :
- Active
- Manufacturer :
- IXYS
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 42 ns
- Base Product Number :
- IXTA160
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 430 W
- Drain to Source Voltage (Vdss) :
- 100 V
- Datasheets
- IXTA160N10T7

N-Channel Tube 7m Ω @ 25A, 10V ±30V 6600pF @ 25V 132nC @ 10V 100 V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA160N10T7 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6600pF @ 25V.This device has a continuous drain current (ID) of [160A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 49 ns.A maximum pulsed drain current of 430A is the maximum peak drain current rated for this device.MOSFETs have 7 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to operate this transistor, a voltage of 100 V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTA160N10T7 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 430A.
single MOSFETs transistor is 7 mΩ
a 100 V drain to source voltage (Vdss)
IXTA160N10T7 Applications
There are a lot of IXYS
IXTA160N10T7 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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