IXTA160N10T7

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Mfr.Part #
IXTA160N10T7
Manufacturer
Littelfuse
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Datasheet
Download
Description
MOSFET N-CH 100V 160A TO263-7
Stock
45,494
In Stock :
45,494

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
TrenchMV™
Supplier Device Package :
TO-263-7 (IXTA..7)
Mounting Style :
SMD/SMT
Pin Count :
4
Case Connection :
DRAIN
Max Power Dissipation :
430 W
Input Capacitance :
6.6 nF
Min Operating Temperature :
-55 °C
Reach Compliance Code :
not_compliant
Height :
4.7 mm
Number of Channels :
1 Channel
Turn-Off Delay Time :
49 ns
Package :
Tube
Number of Elements :
1
Transistor Application :
SWITCHING
Vgs (Max) :
±30V
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
132nC @ 10V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Base Product Number :
IXTA160
Minimum Operating Temperature :
- 55 C
Tradename :
HiPerFET
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
500 mJ
Packaging :
Tube
Number of Terminations :
6
Published :
2006
Power Dissipation :
430W
Channel Mode :
Enhancement
FET Feature :
--
Drain to Source Resistance :
7 mΩ
Mount :
Surface Mount
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Rise Time :
61ns
Product Status :
Active
Fall Time (Typ) :
42 ns
Drain to Source Breakdown Voltage :
100V
Length :
10.2 mm
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Manufacturer :
IXYS
Width :
9.4 mm
Power Dissipation (Max) :
430W (Tc)
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Terminal Finish :
Matte Tin (Sn)
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Continuous Drain Current (ID) :
160A
Transistor Element Material :
SILICON
Max Operating Temperature :
175 °C
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 175 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Drain-source On Resistance-Max :
0.007Ohm
Drain to Source Voltage (Vdss) :
100 V
RoHS :
Compliant
Rds On Max :
7 mΩ
JESD-30 Code :
R-PSFM-G6
Pulsed Drain Current-Max (IDM) :
430A
Power Dissipation-Max :
430W Tc
Product Type :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
Gull wing
Additional Feature :
AVALANCHE RATED
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Subcategory :
MOSFETs
Transistor Type :
1 N-Channel
Qualification Status :
Not Qualified
Product Category :
MOSFET
Datasheets
IXTA160N10T7
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA160N10T7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:6, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), TO-263CB, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, IXTA160N10T7 pinout, IXTA160N10T7 datasheet PDF, IXTA160N10T7 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA160N10T7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA160N10T7


N-Channel Tube 7m Ω @ 25A, 10V ±30V 6600pF @ 25V 132nC @ 10V 100 V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTA160N10T7 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6600pF @ 25V.This device has a continuous drain current (ID) of [160A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 49 ns.A maximum pulsed drain current of 430A is the maximum peak drain current rated for this device.MOSFETs have 7 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to operate this transistor, a voltage of 100 V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTA160N10T7 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 430A.
single MOSFETs transistor is 7 mΩ
a 100 V drain to source voltage (Vdss)


IXTA160N10T7 Applications


There are a lot of IXYS
IXTA160N10T7 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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